Welding structure and method for ultra-pure copper target

A welding method and welding structure technology, applied in the direction of welding/welding/cutting articles, welding equipment, welding equipment, etc., can solve the problem that the uniformity of the target sputtering rate cannot be guaranteed, abnormal phenomena in the target sputtering process, sputtering In order to improve the welding effect, prevent abnormal phenomena and increase the welding area

Pending Publication Date: 2020-09-04
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] CN111155059A discloses a target component and its manufacturing method. The method improves the welding effect by setting threads on the target back plate or the target welding surface, but it does not specifically target the copper target back plate with thicker hardness. Improve
[0005] CN110539067A discloses a method for diffusion welding of high-purity copper targets. The method improves the bonding rate of the target and the back plate by uniformly arranging metal powder on the welding surface, but the method cannot guarantee the sputtering rate of the target The uniformity of the target may also cause abnormal phenomena in the subsequent target sputtering process
[0006] CN111001921A discloses a method for diffusion welding of ultra-high-purity copper targets. In the method, the pitch of the threads is set to 0.35-0.45 mm, the depth is set to 0.2-0.3 mm, and copper powder is added to increase the welding rate, but The addition of the copper powder also has the problem of uneven sputtering

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  • Welding structure and method for ultra-pure copper target
  • Welding structure and method for ultra-pure copper target
  • Welding structure and method for ultra-pure copper target

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Embodiment 1

[0062] This embodiment provides an ultra-high-purity copper target welding structure, such as figure 1 As shown, the welding structure includes an ultra-high-purity copper target 1, and a target back plate 2 welded with the ultra-high-purity copper target; the copper purity of the ultra-high-purity copper target 1 is 99.9999wt% , the target back plate 2 is a CuZn alloy back plate (Cu content 61.8wt%, Zn content 36.6wt%).

[0063] The target back plate 2 includes a welding surface, and the welding surface is provided with toothed threads; the pitch of the threads is 0.15mm, and the depth of the threads is 0.12mm; the angle of the tip angle of the threads is 60° , the roughness of the welding surface of the target back plate is 0.4 μm.

Embodiment 2

[0065] This embodiment provides an ultra-high-purity copper target welding structure, the welding structure includes an ultra-high-purity copper target, and a target back plate welded with the ultra-high-purity copper target; the ultra-high-purity copper The copper purity of the target is 99.99991 wt%, and the target back plate is a CuCr alloy back plate (96.8 wt% Cu content, 0.5 wt% Cr content).

[0066] The target back plate includes a welding surface, and the welding surface is provided with toothed threads; the pitch of the threads is 0.25mm, the depth of the threads is 0.15mm, and the angle of the tip angle of the threads is 55°, The roughness of the welding surface of the target back plate is 0.3 μm.

Embodiment 3

[0068] This embodiment provides an ultra-high-purity copper target welding structure, the welding structure includes an ultra-high-purity copper target, and a target back plate welded with the ultra-high-purity copper target; the ultra-high-purity copper The copper purity of the target is 99.99992wt%, and the target back plate is a CuCr alloy back plate (Cu content 97.1wt%, Cr content 0.4wt%).

[0069] The target back plate includes a welding surface, and the welding surface is provided with toothed threads; the pitch of the threads is 0.15mm, the depth of the threads is 0.10mm, and the angle of the tip angle of the threads is 55°, The roughness of the welding surface of the target back plate is 0.8 μm.

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Abstract

The invention provides a welding structure and method for an ultra-pure copper target. According to the welding structure for the ultra-pure copper target, a thread is arranged on the welding surfaceof a target back board, the gap of the thread is strictly controlled to be 0.15 mm-0.25 mm, the depth of the thread is 0.10 mm-0.15 mm, the size of the thread is improved on the basis of the prior art, the welding binding rate is greatly increased, the size of the thread, the angles of sharp corners of thread tooth tips and the surface roughness of the welding surface are matched, and the weldingbinding rate is further increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to the technical field of ultra-high-purity copper targets, and in particular to an ultra-high-purity copper target welding structure and a welding method. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the size of semiconductor chips has been reduced to the nanometer level, and the RC delay and electromigration of metal interconnections have become the main factors affecting chip performance. Traditional aluminum and aluminum alloy interconnections are no longer available. It can meet the requirements of VLSI process. Compared with aluminum, copper has higher resistance to electromigration and higher electrical conductivity, especially ultra-high-purity copper (purity ≥ 6N), which is of great significance for reducing the resistance of chip interconnection lines and improving its operation speed. [0003] Due to its excell...

Claims

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Application Information

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IPC IPC(8): B23K33/00B23K28/02B23K37/00B23K103/18
CPCB23K28/02B23K33/00B23K37/00B23K2103/18
Inventor 姚力军潘杰边逸军王学泽慕二龙
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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