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Heating device for chemical vapor deposition treatment

A chemical vapor deposition and heating device technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of difficult to guarantee the production quality of silicon wafers, unsatisfactory temperature uniformity, etc., to avoid deformation , the effect of prolonging the service life

Pending Publication Date: 2020-09-04
S C NEW ENERGY TECH CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the deficiencies in the related art is that the temperature uniformity of the heating device when heating the silicon wafer is not ideal, which makes it difficult to guarantee the production quality of the silicon wafer

Method used

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  • Heating device for chemical vapor deposition treatment
  • Heating device for chemical vapor deposition treatment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 1 with figure 2 As shown, the embodiment of the present invention provides a heating device 100 for chemical vapor deposition processing. It includes: a housing 110 and a heating assembly. The casing 110 surrounds and defines a chamber 120 . The heating assembly is disposed in the chamber 120 and includes a plurality of heat conducting parts 140 and a plurality of heating parts 150 . Wherein, at least two heat conduction parts 140 are arranged separately from each other, any heat conduction part 140 cooperates with any at least one heating part 150, the heating part 150 generates heat, and the heat conduction part 140 dissipates the heat from the heating part 150 to the chamber 120 in.

[0039] Specifically, the heating device 100 of this embodiment is used to perform plasma-enhanced chemical vapor deposition on a workpiece. Plasma-enhanced chemical vapor deposition is an important technical method for surface treatment of substances or objects. Thi...

Embodiment 2

[0045] Such as figure 1 with figure 2 As shown, the embodiment of the present invention provides a heating device 100 for chemical vapor deposition processing. In addition to the technical features of Embodiment 1 above, this embodiment further includes the following technical features.

[0046] There is a first gap X between the heat conducting part 140 and the heating part 150 1 .

[0047] In this embodiment, the heating assembly can be disposed above and / or below the carrier 130 , and the heating part 150 and the heat conducting part 140 are respectively disposed along the horizontal direction. In this embodiment, a gap is provided between the heat conducting part 140 and the heating part 150 to protect the heat conducting part 140 . First gap X 1 The length can be 5 mm to 20 mm.

[0048] Specifically, for the aluminum plate heater in the related art, the heating tube is embedded in the aluminum plate groove, and the temperature difference between the area where the ...

Embodiment 3

[0050] Such as figure 1 with figure 2 As shown, the embodiment of the present invention provides a heating device 100 for chemical vapor deposition processing. In addition to the technical features of any of the above embodiments, this embodiment further includes the following technical features.

[0051] The heat conduction part 140 includes: a first heat conduction part 142 and a second heat conduction part 144 . The second heat conduction part 144 is disposed around the periphery of the first heat conduction part 142 . Wherein, there is a second gap X between the first heat conduction part 142 and the second heat conduction part 144 2 .

[0052] In this embodiment, the second heat conduction portion 144 is disposed around the periphery of the first heat conduction portion 142 . For example, there is one first heat conduction portion 142 having a polygonal structure such as rectangle or hexagon, and there are multiple second heat conduction portions 144 arranged around...

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PUM

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Abstract

The invention provides a heating device for chemical vapor deposition treatment. The heating device comprises a housing and a heating assembly, wherein the housing defines a cavity in an encircling manner; the heating assembly is arranged in the cavity and comprises a plurality of heat conducting parts and a plurality of heating parts; and at least two heat conducting parts are arranged in a splitmanner, any heat conducting part is matched with at least one heating part, the heating parts generate heat, and the heat conducting parts emit the heat from the heating parts into the cavity. The heating device can promote the uniform distribution of the temperature in the cavity, thereby improving the degree of heating uniformity of a carrier and silicon wafers on the carrier.

Description

technical field [0001] The invention relates to the technical field of silicon wafer manufacturing, in particular to a heating device for chemical vapor deposition treatment. Background technique [0002] Silicon wafers have broad application prospects in many fields such as solar cell production and semiconductor equipment manufacturing. [0003] The use of plasma enhanced chemical vapor deposition (English name: Plasma Enhanced Chemical VaporDeposition, English abbreviation: PECVD) is to carry out surface treatment on silicon wafers and is an important means to improve the performance of silicon wafers. [0004] When performing chemical vapor deposition treatment, it is necessary to use a heating device to heat the silicon wafer. One of the disadvantages in the related art is that the temperature uniformity of the heating device when heating the silicon wafer is not ideal, which makes it difficult to guarantee the production quality of the silicon wafer. Contents of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46
CPCC23C16/46
Inventor 李时俊梁建军朱海剑
Owner S C NEW ENERGY TECH CORP