Novel edge etching reaction device and edge etching method
A reaction device and edge technology, which is applied in the field of new edge etching reaction devices, can solve the problems of poor etching precision in the edge region of the wafer, low etching efficiency of the edge etching device, etc., so as to reduce control requirements and improve etching accuracy. Effect
Inactive Publication Date: 2020-09-04
上海邦芯半导体科技有限公司
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Problems solved by technology
[0005] However, in the existing edge etching process using an edge etching device, the etching accuracy of the edge area of the wafer is poor, and the etching efficiency of the edge etching device is low
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Embodiment Construction
[0040] An embodiment of the present invention provides a novel edge etching reaction device, combined with reference figure 1 ,include:
[0041] body cavity;
[0042] The upper electrode 100 and the lower electrode 110 located in the body cavity, the upper electrode 100 and the lower electrode 110 are arranged oppositely, the radio frequency frequency applied by the upper electrode 100 and the lower electrode 110 is the same, the upper electrode 100 and the lower electrode The potential amplitude difference between 110 is less than or equal to the first threshold, and the potential phase difference between the upper electrode 100 and the lower electrode 110 is less than or equal to the second threshold;
[0043] A side electrode connection part 160, the side electrode connection part 160 has a first position state and a second position state, and the side electrode connection part 160 surrounds the sides of the upper electrode 100 and the lower electrode 110 in the first posi...
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Abstract
The invention discloses a novel edge etching reaction device and an edge etching method. The device comprises an upper electrode and a lower electrode which are located in a main body cavity. The upper electrode and the lower electrode are oppositely arranged, radio frequency applied by the upper electrode and the lower electrode is the same, the potential amplitude difference between the upper electrode and the lower electrode is smaller than or equal to a first threshold value, and the potential phase difference between the upper electrode and the lower electrode is smaller than or equal toa second threshold value. The side electrode connecting piece has a first position state and a second position state, the side electrode connecting piece surrounds the side parts of the upper electrode and the lower electrode in the first position state, and the side electrode connecting piece surrounds the side part of the upper electrode or the side part of the lower electrode in the second position state; and the voltage difference between the upper electrode and the lower electrode and the side electrode connecting piece is used for plasma discharge. The novel edge etching reaction devicecan improve the etching precision and efficiency of the edge etching area.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a novel edge etching reaction device and an edge etching method. Background technique [0002] In semiconductor manufacturing, multiple processes are involved, and each process is completed by certain equipment and processes. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process uses the reactive gas to generate plasma after obtaining energy, which contains charged particles such as ions and electrons and highly chemically active neutral atoms, molecules and free radicals, and performs physical and chemical reactions on the etching object. etch. [0003] However, during the plasma etching process, the etching conditions at the edge of the wafer are quite different from those at the center of the wafer. The etching conditions include: plasma density distribution, radio freque...
Claims
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IPC IPC(8): H01L21/67H01L21/02H01J37/32
CPCH01J37/32082H01J37/32431H01J37/32623H01J2237/334H01J2237/3343H01L21/02021H01L21/67069
Inventor 吴堃
Owner 上海邦芯半导体科技有限公司