Data retrieval storage array

Abstract

A data retrieval storage array comprises an input layer, an output layer and retrieval storage units, wherein the input layer inputs variable source voltage, drain voltage, gate voltage, positive andnegative voltage and duration of the voltage, and change of input information enables the charge injection amount to change; the output layer outputs drain current, bit line current, a transfer characteristic curve, sub-threshold swing and a threshold voltage; an array for processing a data retrieval task is established among the retrieval storage units, one retrieval storage unit consists of a memory for outputting a U-shaped transfer characteristic curve, and the retrieval mode is as follows: a first row of page or a plurality of rows of NOR Flash execute retrieval data, and other units output storage data; and data retrieval is executed by the first column or a plurality of columns of bit lines of the NAND Flash, other units output the storage data, if the retrieval data is successfullymatched, it is indicated that retrieval is successful, and the storage data is output. According to the invention, the size of an integrated circuit and the density of unit devices are reduced, and the retrieval efficiency is improved.

Description

technical field [0001] The invention relates to a novel data retrieval memory, specifically, a novel storage unit structure based on a cold source field effect transistor, and a data retrieval storage array and a retrieval method using the novel storage unit as a node. Background technique [0002] At present, the development of semiconductor technologies such as global chips is in a critical period of size limit. Since the invention of semiconductor transistors, the size of silicon-based field effect transistors has been continuously reduced, which has brought about a huge increase in device speed and integration. Silicon-based device technology is facing more and more challenges after the 90nm technology node, and the use of new materials and new processes has met the needs of devices that can continue to reduce their size in the past ten years. The semiconductor industry guided by Moore's Law has entered the sub-10nm technology node. According to The International Techno...

AI Technical Summary

Problems solved by technology

[0007] The present invention aims at the problems that the existing traditional content addressable memory (Content Addressable Memory, CAM) is not compatible with Flash, the circuit size is difficult to reduce, the power consumption is high, and the data retrieval efficiency is low. For example, as the new type of storage unit as the node data retrieval storage array and the node unit of the retrieval method, a data retrieval storage array that can reduce the circuit size, improve the area utilization efficiency, and improve the retrieval efficiency is provided.

Images