Assembly block for high-temperature and high-pressure modification of CVD cultivated diamond and modification method

A high-temperature, high-pressure, diamond technology, which is applied in the direction of using atmospheric pressure to chemically change substances, chemical instruments and methods, and components of pressure vessels, can solve crystal defects, non-diamond crystal structure defects, and diamonds that are difficult to achieve clarity. Standards and other issues to achieve the effect of improving color and transparency

Pending Publication Date: 2020-09-15
山东聊城君锐超硬材料有限公司
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is easy to grow carat-level gem-quality diamonds, the color and transparency of the grown diamonds are poor
[0003] Due to the limitations of the growth method, CVD diamonds tend to have more crystal defects, such as vacancies, non-diamond crystal structure defects, etc., and it is difficult for the grown diamonds to reach D, E, F grade colors and VVS and above clarity standards. Improve the above problems through subsequent modification

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Assembly block for high-temperature and high-pressure modification of CVD cultivated diamond and modification method
  • Assembly block for high-temperature and high-pressure modification of CVD cultivated diamond and modification method
  • Assembly block for high-temperature and high-pressure modification of CVD cultivated diamond and modification method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1: A CVD-grown diamond assembly block for high-temperature and high-pressure modification

[0036] It includes a pyrophyllite block 1, a conductive cap 2, a heating sheet 3, a heating pipe 4, a first heat preservation pipe 5, a second heat preservation pipe 6, and a heat preservation column 7.

[0037] The pyrophyllite block 1 is located at the outermost periphery and is a pressure transmission and sealing medium, which can transmit the pressure on the top hammer of the high-temperature and high-pressure synthesis press to the inside of the assembly block, and at the same time has a certain sealing effect, which can seal the inside of the assembly block. Pressure, to ensure the safety of high temperature and high pressure modification. The pyrophyllite block 1 is centered and has a cylindrical installation cavity 8 that penetrates up and down. The remaining components include conductive cap 2×2, heating plate 3×2, heating pipe 4×1, first heat preservation pipe ...

Embodiment 2

[0046] Example 2: A CVD-grown diamond assembly block for high-temperature and high-pressure modification

[0047] Most of the structure of the assembly block is the same as that of Embodiment 1, and the difference between the two examples lies in the specific structure of the pyrophyllite block 1 and the materials used for each component.

[0048] 1) The structure of the pyrophyllite block 1: In this example, the pyrophyllite block adopts a structure divided into upper and lower stone blocks, which is convenient for assembly.

[0049] 2) Materials used for conductive cap 2, heating plate 3, heating pipe 4, first heat preservation pipe 5, second heat preservation pipe 6, and heat preservation column 7:

[0050] The metal bowl 10 of the conductive cap 2 is made of titanium gold; the filler core 9 of the conductive cap 2 is made of alumina ceramic material;

[0051] The heating sheet 3 and the heating tube 4 use artificial carbon;

[0052] Magnesium oxide ceramics are used for ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an assembly block for high-temperature and high-pressure modification of CVD cultivated diamond and a modification method, and mainly relates to the technical field of superhard material synthesis. The assembly block comprises a pyrophyllite block body located on the outer layer. A mounting cavity penetrating through the pyrophyllite block is formed in the pyrophyllite block; conductive caps corresponding to the sections of the mounting cavity are arranged at the two ends of the mounting cavity; a heating sheet in contact with the conductive caps is arranged on the endsurface of the inner side of the conductive caps; a heating pipe is arranged between the two heating pieces, the axial direction of the heating pipe is perpendicular to the heating pieces, the annularend faces of the two ends of the heating pipe make contact with the heating pieces on the same side respectively, the heating pipe is sleeved with a first heat preservation pipe, two heat preservation columns are arranged in the heating pipe, and a diamond is placed between the two heat preservation columns. The assembly block has the beneficial effects that ultrahigh pressure can be conducted, heat is generated to modify the CVD cultivated diamond, the crystallization quality of the CVD cultivated diamond is improved, and the color and the cleanliness grade of the CVD cultivated diamond areimproved.

Description

technical field [0001] The invention relates to the technical field of superhard material synthesis, in particular to an assembly block and a modification method for high-temperature and high-pressure modification of CVD-grown diamond. Background technique [0002] Lab-grown diamonds are diamonds grown and manufactured by artificial methods to simulate the crystallization characteristics of natural diamonds. They are real diamonds in every respect: chemical, physical, atomic and optical, and have all the same characteristics as natural diamonds. The CVD method is the main method for producing large-grained diamonds. In the metastable area of ​​diamonds, low temperature and high pressure conditions are used, about 900 ° C. In the vacuum reaction chamber, microwaves are used to heat the gas containing C - methane (CH4) and hydrogen. , to generate plasma, C decomposes from the gas compound state into a single free atomic state, after diffusion and convection, finally the diamon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J3/06B01J3/00
CPCB01J3/065B01J3/002
Inventor 蔡立超秦超王伦宗王济兵韩咏
Owner 山东聊城君锐超硬材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap