Vertical semiconductor device with conductive layer, method of manufacturing same and electronic equipment
A semiconductor and conductive layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult to control gate length, and achieve the effect of reducing source/drain resistance
Pending Publication Date: 2020-09-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
However, for single-crystal channel materials, it is difficult to control the gate length on the one hand, and to provide low resistance in the source / drain region on the other hand.
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[0015] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.
[0016] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...
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Abstract
The invention discloses a vertical semiconductor device with a conductive layer, a method of manufacturing the same and electronic equipment including the vertical semiconductor device. According to an embodiment, the semiconductor device may include a substrate, a first metallic layer, a channel layer, a second metallic layer and a gate stack, wherein the first metallic layer, the channel layer and the second metallic layer are sequentially arranged on the substrate; and the gate stack is formed around at least part of the periphery of the channel layer, and the first metallic layer, the second metallic layer and the channel layer are of a single crystal structure.
Description
technical field [0001] The present disclosure relates to the semiconductor field, in particular, to a vertical semiconductor device with a conductive layer, especially a metallic layer, a manufacturing method thereof, and an electronic device including the semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the area occupied by the horizontal device cannot be further reduced or the manufacturing cost cannot be further reduced. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, compared with horizontal devices, vertical devices are easier to scale down or lower manufacturing costs. [0003] In vertical devices, it is desirable to use si...
Claims
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IPC IPC(8): H01L29/08H01L29/10H01L29/423H01L29/78H01L21/336
CPCH01L29/0847H01L29/1033H01L29/42356H01L29/7827H01L29/7839H01L29/66666H01L29/66545H01L29/1083H01L29/7845H01L29/78642B82Y10/00H01L29/775H01L29/66439H01L29/0676H01L21/823412H01L21/823418H01L27/088H01L29/0673H01L29/42392H01L29/66469H01L29/78696
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI