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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large lattice mismatch, high noise, and many defects in indium gallium phosphide films

Active Publication Date: 2020-09-18
GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the integrated growth of InGaP structure on the substrate often results in more defects in the epitaxially grown InGaP film due to the large lattice mismatch, and the formed optoelectronic device has a large dark current and a large noise

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0043] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings.

[0044] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do it without violating the content of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0045] Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged...

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Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the steps: providing a germanium substrate, forming a galliumarsenide layer on the germanium substrate, and forming an indium-gallium-phosphorus layer on the gallium arsenide layer, so that the gallium arsenide layer can be used as a buffer layer between the germanium substrate and the indium-gallium-phosphorus layer, improve lattice mismatch between the germanium substrate and the indium-gallium-phosphorus layer, reduce a reverse domain in the indium-gallium-phosphorus layer, reduce defects in the indium-gallium-phosphorus layer and improve the performance of the device based on the indium-gallium-phosphorus layer.

Description

technical field [0001] The present application relates to the field of semiconductor devices and manufacturing thereof, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the diversification of semiconductor devices, it is necessary to combine multiple semiconductor materials to form semiconductor devices. In some scenarios, it is necessary to use indium gallium phosphide (InGaP) materials to prepare optoelectronic devices. However, the integrated growth of InGaP structure on the substrate often results in large lattice mismatch, resulting in many defects in the epitaxially grown InGaP film, and the formed optoelectronic device has a large dark current and high noise. Contents of the invention [0003] In view of this, the purpose of the present application is to provide a semiconductor structure and a manufacturing method thereof, so as to improve the quality of the film. [0004] In order to achieve the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/267
CPCH01L21/02381H01L21/02463H01L21/02543H01L29/267
Inventor 王桂磊黎奔亨利·H·阿达姆松杜勇徐步青
Owner GUANGDONG GREATER BAY AREA INST OF INTEGRATED CIRCUIT & SYST
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