A kind of porous/hollow structure silicon-based negative electrode material and preparation method thereof
A silicon-based negative electrode material and hollow technology, applied in structural parts, chemical instruments and methods, silicon oxide, etc., can solve the problems of high cost, harsh preparation conditions, and inability to mass-produce, and achieve low cost and simple and easy preparation method Uniform and controllable effect of row and pore distribution
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[0012] The embodiment of the present application provides a method for preparing a porous / hollow structure silicon-based negative electrode material, comprising the following steps:
[0013] S1: heating the raw material providing SiO gas in the sublimation chamber 1 to generate SiO vapor by sublimation;
[0014] S2: heating the soluble salt in the sublimation chamber 2 to generate soluble salt vapor for sublimation;
[0015] S3: Introduce SiO vapor and soluble salt vapor into the condensation chamber to deposit the precursor;
[0016] S4: The precursor is crushed, screened, washed with water, and dried to obtain the silicon-based negative electrode material with a porous / hollow structure.
[0017] Specifically, the step S1 refers to heating the raw material that provides SiO gas to generate SiO vapor in a vacuum environment and at a certain temperature; the certain temperature is controlled at 900-1400°C; It can be controlled within 0.5~12h; the raw material for providing Si...
Embodiment 1
[0026] After mixing silicon powder and silicon dioxide powder evenly in a certain proportion, put them into the sublimation chamber 1 for heat treatment at a temperature of 1400°C and vacuum degree ≤ 100Pa, and obtain SiO vapor after heating for 1 hour; put NaCl salt into the sublimation chamber 2 Carry out heat treatment at a temperature of 1500°C and a vacuum degree of ≤100Pa. After heating for 1 hour, NaCl vapor is obtained; SiO vapor and NaCl vapor are simultaneously introduced to the condensation chamber for co-deposition on the deposition plate. The condensation temperature is 300°C and the time is 2 hours. SiO / NaCl precursor; crush the precursor by ball milling and sieve to obtain a SiO / NaCl material with a particle size of 5 μm; filter and wash the SiO / NaCl material with water, and vacuum dry it at 100°C to obtain a porous structure negative electrode material.
[0027] Use scanning electron microscope (SEM, electronic scanning electron microscope FEI Inspect S50) to a...
Embodiment 2
[0029] Mix silicon powder and silicon dioxide powder evenly in a certain proportion, put them into the sublimation chamber 1 for heat treatment, the temperature is 1400°C, the vacuum degree is ≤100Pa, and SiO vapor is obtained after heating for 1 hour; the MgCl 2 Put the salt into the sublimation chamber 2 for heat treatment, the temperature is 1450 ° C, the vacuum degree is ≤ 100 Pa, and after heating for 1 hour, MgCl is obtained 2 steam; the MgCl 2 The steam is introduced into the condensation chamber for deposition on the deposition plate, the condensation temperature is 350°C, and the time is 1h, and then the SiO vapor is introduced into the condensation chamber and deposited on the MgCl 2 Deposited on the surface, the condensation temperature is 350 ° C, the time is 1 h, and the SiO / MgCl 2 Precursor; the precursor is pulverized by ball milling and sieved to obtain SiO / MgCl with a particle size of 8 μm 2 Material; SiO / MgCl 2 The material was washed with suction and wate...
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