Porous/hollow structure silicon-based negative electrode material and preparation method thereof
A silicon-based negative electrode material, hollow technology, applied in structural parts, chemical instruments and methods, silicon oxide, etc., can solve the problems of inability to mass-produce, high cost, harsh preparation conditions, etc., and achieve uniform and controllable pore distribution, The effect of low cost and simple and easy preparation method
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[0012] The embodiment of the present application provides a method for preparing a porous / hollow structure silicon-based negative electrode material, comprising the following steps:
[0013] S1: heating the raw material providing SiO gas in the sublimation chamber 1 to generate SiO vapor by sublimation;
[0014] S2: heating the soluble salt in the sublimation chamber 2 to generate soluble salt vapor for sublimation;
[0015] S3: Introduce SiO vapor and soluble salt vapor into the condensation chamber to deposit the precursor;
[0016] S4: The precursor is crushed, screened, washed with water, and dried to obtain the silicon-based negative electrode material with a porous / hollow structure.
[0017] Specifically, the step S1 refers to heating the raw material that provides SiO gas to generate SiO vapor in a vacuum environment and at a certain temperature; the certain temperature is controlled at 900-1400°C; It can be controlled within 0.5~12h; the raw material for providing Si...
Embodiment 1
[0026] After mixing silicon powder and silicon dioxide powder evenly in a certain proportion, put them into the sublimation chamber 1 for heat treatment at a temperature of 1400°C and vacuum degree ≤ 100Pa, and obtain SiO vapor after heating for 1 hour; put NaCl salt into the sublimation chamber 2 Carry out heat treatment at a temperature of 1500°C and a vacuum degree of ≤100Pa. After heating for 1 hour, NaCl vapor is obtained; SiO vapor and NaCl vapor are simultaneously introduced to the condensation chamber for co-deposition on the deposition plate. The condensation temperature is 300°C and the time is 2 hours. SiO / NaCl precursor; crush the precursor by ball milling and sieve to obtain a SiO / NaCl material with a particle size of 5 μm; filter and wash the SiO / NaCl material with water, and vacuum dry it at 100°C to obtain a porous structure negative electrode material.
[0027] Use scanning electron microscope (SEM, electronic scanning electron microscope FEI Inspect S50) to a...
Embodiment 2
[0029] Mix silicon powder and silicon dioxide powder evenly in a certain proportion, put them into the sublimation chamber 1 for heat treatment, the temperature is 1400°C, the vacuum degree is ≤100Pa, and SiO vapor is obtained after heating for 1 hour; the MgCl 2 Put the salt into the sublimation chamber 2 for heat treatment, the temperature is 1450 ° C, the vacuum degree is ≤ 100 Pa, and after heating for 1 hour, MgCl is obtained 2 steam; the MgCl 2 The steam is introduced into the condensation chamber for deposition on the deposition plate, the condensation temperature is 350°C, and the time is 1h, and then the SiO vapor is introduced into the condensation chamber and deposited on the MgCl 2 Deposited on the surface, the condensation temperature is 350 ° C, the time is 1 h, and the SiO / MgCl 2 Precursor; the precursor is pulverized by ball milling and sieved to obtain SiO / MgCl with a particle size of 8 μm 2 Material; SiO / MgCl 2 The material was washed with suction and wate...
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