Wafer detection infrared light steering mechanism and method
A technology of steering mechanism and infrared light, which is applied in the direction of measuring device, transmittance measurement, optical device, etc., can solve the problems of separate detection of wafer thickness and carbon and oxygen content, and achieve the effect of improving production quality and efficiency
Inactive Publication Date: 2020-09-22
苏州舜治自动化机械设备有限公司
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[0003] The object of the present invention is to provide a wafer detection infrared light steering mechanism and method to solve the problem in the prior art that wafer thickness and carbon and oxygen content need to be detected separately
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[0015] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.
[0016] Such as figure 1 As shown, a wafer detection infrared light steering mechanism of the present invention includes a reflector 1, a curved mirror 1 2 and a curved mirror 2 3, and a test wafer 4 is placed between the curved mirror 1 2 and the curved mirror 2 3. The first curved mirror 2 and the second curved mirror 3 are symmetrically distributed on both sides of the wafer 4 , and the reflecting mirror 1 is arranged obliquely above the first curved mirror 2 .
[0017] The steering method of the wafer detection infrared light steering mechanism ...
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The invention relates to a wafer detection infrared light steering mechanism and method. Infrared light emitted by an infrared testing machine is reflected by a reflector and is emitted to the surfaceof a wafer at an incident angle of 15 degrees for reflection or transmission. For the reflection part, infrared light emitted on the surface of the wafer is reflected to a first curved mirror above the wafer through the wafer, and the infrared light is converged to a first receiver through the first curved mirror to be used for analyzing and testing the thickness of the wafer. For the projectionpart, infrared light emitted on the surface of the wafer is transmitted to a second curved mirror below the wafer through the wafer, and the infrared light is converged to a second receiver through the second curved mirror to be used for detecting the carbon and oxygen content of the wafer. The wafer detection infrared light steering mechanism is compatible with reflection and transmission functions at the same time, is used for detecting the thickness and the carbon and oxygen content of the wafer, automatically switches programs, does not need manual operation, and improves the production quality and efficiency.
Description
technical field [0001] The invention relates to the technical field of wafer detection, in particular to a wafer detection infrared light steering method. Background technique [0002] At present, in the production process of the semiconductor industry, the wafer is divided into multi-size wafers for epitaxy. The needs of different customers are different. Some need to detect the thickness of the wafer edge, and some need to detect the carbon and oxygen content of the wafer. At present, it is generally It uses an infrared spectrometer to detect the thickness and carbon and oxygen content through manual detection. Contents of the invention [0003] The object of the present invention is to provide an infrared light steering mechanism and method for wafer detection, which is used to solve the problem in the prior art that wafer thickness and carbon and oxygen content need to be detected separately. [0004] One aspect of the present invention provides a wafer detection infr...
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Login to View More IPC IPC(8): G01B11/06G01N21/59
CPCG01B11/0625G01N21/59
Inventor 淦克金杨铮吴志锋
Owner 苏州舜治自动化机械设备有限公司