Passivation layer processing method and equipment
A processing method and technology of passivation layer, applied in electrical components, circuits, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor device stability, reduce thinning speed, improve stability and manufacturing yield, and improve hydrophobicity. sexual effect
Active Publication Date: 2020-09-22
HUA HONG SEMICON WUXI LTD
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Problems solved by technology
[0005] The application provides a passivation layer processing method and equipment, which can solve the problem of poor device stability caused by ion beam treatment on the surface of the passivation layer in the related art
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[0031] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0032] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
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Abstract
The invention discloses a passivation layer processing method and equipment. The method comprises the steps: providing a wafer, and forming a passivation layer on the wafer; ashing the passivation layer on the wafer to improve the hydrophobicity of the passivation layer, wherein the reaction gas of the ashing treatment comprises oxygen and nitrogen; and carrying out wet stripping treatment on thepassivation layer after ashing treatment. According to the invention, the passivation layer on the wafer is subjected to ashing treatment by using the reaction gas containing oxygen and nitrogen so asto improve the hydrophobicity of the passivation layer, so that the thinning speed of the surface passivation layer is reduced, the problem of poor protection effect of the passivation layer caused by more loss of the passivation layer when the passivation layer is processed in the related technology is solved, and the stability and the manufacturing yield of the device are improved.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a passivation layer processing method and equipment. Background technique [0002] In semiconductor manufacturing, a passivation layer (such as polymide, which has photoresist-like properties and can be patterned by exposure and development) can be used as a stress-reducing buffer layer to protect devices. Usually, after photolithography, the passivation layer will be solidified into a solid film and left on the surface of the wafer after high temperature treatment to isolate the wafer from the external environment and play the role of passivation protection. [0003] The material of the passivation layer is organic, and there are many hydrogen bonds inside. The hydrogen bonds are easy to combine with the oxygen in the water molecules, so it will show hydrophilicity, and the main function of the passivation layer is to isolate the wafer from the exte...
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IPC IPC(8): H01L21/3105H01L21/56H01L21/67
CPCH01L21/3105H01L21/31058H01L21/56H01L21/67017
Inventor 张宇吴长明冯大贵欧少敏王玉新蒋志伟
Owner HUA HONG SEMICON WUXI LTD