Inductive coupling type plasma etching reactor

Abstract

The invention relates to the technical field of semiconductor integrated circuit manufacturing, and discloses an inductive coupling type plasma etching reactor, which comprises an etching cavity, a medium window sheet and a cooling air guide pipe, wherein the dielectric window sheet comprises an upper layer dielectric window sheet and a lower layer dielectric window sheet which are respectively made of a low dielectric constant material, an air cooling groove is formed in the lower surface of the upper layer dielectric window sheet and / or the upper surface of the lower layer dielectric windowsheet, an electric heater is embedded in the upper surface of the lower layer dielectric window sheet and / or the interior of the lower layer dielectric window sheet, and the cooling air guide pipe iscommunicated with the air cooling groove, so that the temperature and the uniformity of the dielectric window sheets in the reactor can be adjusted through the air cooling system arranged in the dielectric window sheets, and the heating and cooling systems of the window sheet structure can be fully decoupled through the structural design of the multiple dielectric window sheets so as to achieve the effective improvement on the etching uniformity.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and in particular relates to an inductively coupled plasma etching reactor. Background technique [0002] Etching technology is a technology that selectively etches or strips the surface of the semiconductor substrate or the surface covering film according to the mask pattern or design requirements in the semiconductor manufacturing process. It is not only the basic manufacturing process of semiconductor devices and integrated circuits, but also It is also used in the processing of thin film circuits, printed circuits and other fine graphics. In a typical plasma etching process, different process gas combinations (such as CxFy, O 2 and Ar and other gases) in a radio frequency (Radio frequency) environment to form a plasma through radio frequency excitation, and then in the upper and lower etching chambers (typical etching chambers include capacitive couplin...

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Problems solved by technology

[0005] In order to solve the problem that the heater and fan / liquid cooling system cannot be fully decoupled and the temperature uniformity of the window cannot be guaranteed in the active temperature control scheme of the dielectric window in the existing inductively coupled plasma etching reactor , the purpose of the present invention is to provide a new type of inductively coupled plasma etching reactor, which can adjust the temperature and uniformity of the dielectric window in the reactor through the built-in gas cooling system, and can also adjust the temperature and uniformity of the dielectric window through the multi-piece dielectric window Designed to fully decouple the heating and cooling systems of the window structure to achieve effective improvements in etch uniformity

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