Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A heat dissipation substrate, power module, power device and heat dissipation substrate processing method

A heat dissipation substrate and power module technology, which is applied in the manufacture of semiconductor devices, electrical solid state devices, semiconductor/solid state devices, etc., can solve the problems of heat dissipation, heat dissipation, and conduction of power chips, and achieve low assembly difficulty and low processing cost Effect

Active Publication Date: 2022-02-15
FOSHAN NATIONSTAR OPTOELECTRONICS CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason for the heat accumulation problem is, on the one hand, due to the limitation of the packaging structure, it is difficult to dissipate the heat through the packaging structure; on the other hand, the reason is that due to the dense arrangement of power chips, it is difficult for the heat of the power chip in the center to conduct through the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A heat dissipation substrate, power module, power device and heat dissipation substrate processing method
  • A heat dissipation substrate, power module, power device and heat dissipation substrate processing method
  • A heat dissipation substrate, power module, power device and heat dissipation substrate processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] figure 1 A schematic diagram of a three-dimensional perspective structure of a heat dissipation substrate according to an embodiment of the present invention is shown. The present invention provides a heat dissipation substrate 1, basically, the heat dissipation substrate 1 includes a first conductive surface layer 101, a connection layer 100 and a second conductive surface layer 102, specifically, the first conductive surface layer 101 and the second conductive surface layer 102 are electrically connected, and the potentials of the first conductive surface layer 101 and the second conductive surface layer 102 are equal everywhere.

[0052] Specifically, the first conductive surface layer 101 and the second conductive surface layer 102 are attached to the two surfaces of the connection layer 100 respectively, and the three are combined to form the heat dissipation substrate 1 .

[0053] Specifically, a first flow channel 111 is provided between the first conductive surfa...

Embodiment 2

[0059] Specifically, the manner in which the first conductive surface layer 101 and the second conductive surface layer 102 are electrically connected includes: the connection layer 100 is an insulating layer, and the first conductive surface layer 101 and the second conductive surface layer 102 are based on passing through The electrical connectors or copper sink holes of the connection layer are electrically connected; or the connection layer 100 is a conductive layer, and the first conductive surface layer 101 and the second conductive surface layer 102 are electrically connected based on the connection layer.

[0060] In a specific implementation, the entire heat dissipation substrate 1 can be regarded as a whole metal plate, the electric potentials of the heat dissipation substrate 1 are equal everywhere, and the whole heat dissipation substrate 1 can be regarded as a large electrode. Through this embodiment, the embodiment of the electrical connection between the first co...

Embodiment 3

[0062] Optionally, the first flow channel 111 is disposed on the first conductive surface layer 101 ; and / or the second flow channel 112 is disposed on the second conductive surface layer 102 .

[0063] The above arrangement of the first flow channel and the second flow channel mainly considers the convenience of processing, especially when the heat dissipation substrate 1 is a DBC substrate structure, it can avoid processing on the connection layer with poor processability, and has good processing convenience.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a heat dissipation substrate, comprising a first conductive surface layer, a connection layer and a second conductive surface layer, the first conductive surface layer and the second conductive surface layer are electrically connected; the first conductive surface layer and the second conductive surface layer The surface layers are attached to the two surfaces of the connection layer respectively; a first flow channel is provided between the first conductive surface layer and the connection layer, and the first flow channel has at least one first flow channel opening; and / or A second flow channel is provided between the second conductive surface layer and the connection layer, and the second flow channel has at least one second flow channel opening. The central part of the heat dissipation substrate has excellent heat dissipation performance, can avoid heat accumulation, and has a good heat dissipation function. In addition, the invention also discloses a power module, a power device and a heat dissipation substrate processing method.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to a heat dissipation substrate, a power module, a power device and a processing method for the heat dissipation substrate. Background technique [0002] Power devices refer to semiconductor devices with voltage and current processing capabilities, and the substrate is one of the main components of power devices. For power devices, the substrate plays the role of chip support, chip circuit connection, and auxiliary chip heat dissipation. With the improvement of the integration level of power devices and the miniaturization requirements of power devices, the heat accumulation problem of power devices is becoming more and more serious, especially the heat accumulation problem of power chips located in the center of power devices is the most serious. The reason for the heat accumulation problem is, on the one hand, due to the limitation of the packaging structure, it is difficult to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/473H01L21/48H01L23/31H01L23/48H01L25/07
CPCH01L23/3672H01L23/473H01L23/3121H01L23/481H01L25/071H01L21/4871
Inventor 杨宁谢健兴王冠玉张雪袁毅凯
Owner FOSHAN NATIONSTAR OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com