Thin film growth device and thin film growth method
A technology of thin film growth and radio frequency generator, which is applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of poor uniformity and gradient distribution of the film, achieve uniformity and consistency improvement, eliminate gradient distribution, The effect of improving consistency
Inactive Publication Date: 2020-10-09
YANGTZE MEMORY TECH CO LTD
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- Application Information
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Problems solved by technology
In the current process, radio frequency plasma is prone to gradient distribution during film growth, and the grown film has poor uniformity
Method used
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[0033] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.
[0034] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0035] If it is to describe the situation directly on another layer or an...
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The invention discloses a thin film growth device and a thin film growth method. The thin film growth device comprises a reaction chamber, a substrate supporting piece located in the reaction chamberand used for bearing a wafer, a back plate located at the top of the reaction chamber and a gas distribution spray header located below the back plate and provided with a gas channel, and further comprises: a radio frequency generator located above the back plate and used for providing a radio frequency current; radio frequency bands which are connected with the back plate and the radio frequencygenerator to form a radio frequency channel between the radio frequency generator and the back plate, wherein the radio frequency current is guided into the reaction chamber, the radio frequency bandsare distributed above the back plate at intervals, and gas is dissociated into radio frequency plasmas under the action of the radio frequency current and then diffused to the wafer for film growth.According to the thin film growth device, the plurality of radio frequency bands are arranged above the back plate, and radio frequency currents are introduced into the reaction chamber from multipledirections, so that the concentration of plasmas generated in the reaction chamber is uniform, a thin film with uniform thickness can be formed on the surface of a wafer, and the growth consistency ofthe thin film is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a thin film growth device and a thin film growth method. Background technique [0002] In the manufacturing process of semiconductor chips, several layers of thin films with different materials and different thicknesses need to be grown on the surface of the wafer, including conductive film layers and insulating film layers. Thin films are typically made of thin metal or organic layers with a thickness ranging from a single atom to a few millimeters. Common thin film growth techniques can be divided into physical methods and chemical methods. Depending on the role and location, thin film growth techniques can include thermal oxidation, chemical vapor deposition, and physical vapor deposition. The preparation of thin films is an important link in the manufacturing process of semiconductor integrated circuits. [0003] EC (Extinction coefficient, ext...
Claims
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Login to View More IPC IPC(8): H01J37/32C23C16/507
CPCC23C16/507H01J37/32082H01J2237/3321
Inventor 蒋志超罗兴安胡淼龙张春雷王林
Owner YANGTZE MEMORY TECH CO LTD