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Medium-wave double-color infrared detector

An infrared detector and two-color technology, applied in the field of infrared detectors, can solve the problems of long calculation time and consumption, and achieve the effect of reducing power consumption

Active Publication Date: 2020-10-09
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the attenuation of the infrared characteristic signal by the atmosphere, the high-bright sunlight reflection of the vegetation and the ocean, it is usually difficult for the MAW system based on the traditional monochromatic MWIR device to distinguish the warm target of the missile and the clutter in the background from the hot missile in the distance. , has a high false alarm rate, and the process of suppressing and processing false alarms will consume a long calculation time

Method used

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  • Medium-wave double-color infrared detector

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Embodiment 1

[0026] The first embodiment of the present invention provides a medium-wave two-color infrared detector, such as figure 1 As shown, it includes: a substrate, a first PIN structure 2 and a second PIN structure 4;

[0027] Wherein, the first PIN structure 2 is grown on the substrate, and the second PIN structure 4 and the first PIN structure 2 are stacked back to back.

[0028] Specifically, in this embodiment, a commercial direct epitaxial (Epi-ready) N-type InSb (100) substrate can be selected for the substrate InSb sub, and the substrate is pretreated and completely deoxidized in the MBE equipment. Then the first PIN structure 2 and the second PIN structure 4 are grown on the substrate InSb sub, wherein as figure 1 As shown, the first PIN structure 2 and the second PIN structure 4 are stacked back to back. The two-color infrared detector of the present invention realizes medium-wave two-color detection and reduces the power consumption, volume, weight and cost of the detecto...

Embodiment 2

[0054] The second embodiment of the present invention provides a method for manufacturing a medium-wave two-color infrared detector, which includes the following specific steps:

[0055] The commercial direct epitaxial (Epi-ready) N-type InSb (100) substrate is selected, and the substrate is pretreated and completely deoxidized in the MBE equipment. Epitaxial growth of the medium-wave two-color infrared detector structure according to the following steps:

[0056] 1. Epitaxial growth of 1 μm thick non-doped InSb buffer buffer layer;

[0057] 2. Epitaxially grow T (T≥3) 20nm thick P-type (10 18 cm -3 )InAs 1-x Sb x Component gradient buffer layer, from InAs 0.05 Sb 0.95 until InAs 0.91 Sb 0.09 , T is as large as possible to provide a lattice-matched gradient buffer layer;

[0058] 3. Epitaxial growth of 0.5-1μm thick P-type (10 18 cm -3 )InAs 0.91 Sb 0.09 MW blue channel electrode layer;

[0059] 4. Epitaxial growth of 2-4μm thick non-doped InAs 0.91 Sb 0.09 MW ...

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Abstract

The invention discloses a medium-wave double-color infrared detector. The medium-wave double-color infrared detector comprises a substrate, a first PIN type structure and a second PIN type structure,wherein the first PIN type structure grows on the substrate, and the second PIN type structure and the first PIN type structure are arranged in a back-to-back stacking mode. According to the invention, the second PIN type structure and the first PIN type structure are stacked on the substrate in a back-to-back manner, thereby forming the double-color infrared detector, achieving the medium-wave double-color detection, and reducing the power consumption, size, weight and cost of a detector refrigerating machine.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a medium-wave two-color infrared detector. Background technique [0002] Infrared bands can be roughly divided into short-wave infrared (SWIR, 1-3 μm), medium-wave infrared (MWIR, 3-5 μm), long-wave infrared (LWIR, 8-12 μm), and very long-wave infrared (VLWIR, 12-25 μm). The combination of detectors in different bands is called dual-band detectors, for example, SWIR / LWIR, MWIR / LWIR and LWIR / VLWIR; the combination of detectors in two sub-bands in the same band is called dual-color detectors, such as MWIR / MWIR, LWIR / LWIR etc. On the left and right sides of the 4.2μm CO2 absorption line, the MWIR band can be divided into two spectral channels: "blue" (3.4-4μm) and "red". 4.1-5.1 μm, 4.4-5 μm or 4.4-5.5 μm, etc. Here "red" and "blue" are just relative concepts and have no meaning in chromaticity. For example, the LWIR band is divided into blue (5.3-5.5 μm) and red (8-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/105
CPCH01L31/1013H01L31/105
Inventor 尚林涛周朋
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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