Plasmon Whispering Gallery Optically Pumped Laser and Its Preparation Method
A technology of plasmons and whispering galleries, applied in the field of laser light sources, can solve problems that are difficult to transform into electrical devices
Active Publication Date: 2022-04-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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These are only used for basic research, and it is difficult to be converted into electrical devices later
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[0059] As another aspect of the present invention, a method for preparing a plasmonic whispering gallery optically pumped laser is also provided, including the following steps:
[0060] Epitaxial growth of the buffer layer, alternately stacked lightly and heavily doped layers, n-type doped GaN layer, active layer, electron blocking layer, and p-type doped GaN layer on the substrate in sequence;
[0061]The alternately stacked lightly and heavily doped layers are laterally etched by electrochemical etching to form a porous DBR layer at the bottom;
[0062] Fabricate a metal mask on the p-type doped GaN layer;
[0063] Using the mask plate as a mask, the p-type doped GaN layer, the electron blocking layer, the active layer, the n-type doped layer, the bottom porous DBR layer, and the buffer layer are sequentially etched downward using plasma-enhanced etching technology;
[0064] Remove the metal mask to get the whispering gallery resonator;
[0065] Form a patterned metal film...
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Abstract
A plasmonic whispering gallery optical pump laser and a preparation method thereof, the plasmonic whispering gallery optical pump laser comprising: a substrate; a buffer layer located on the substrate; a whispering gallery resonant cavity located in the On the buffer layer; including from bottom to top: bottom porous DBR layer, n-type doped GaN layer, active layer, electron blocking layer, p-type doped GaN layer; metal particle layer, formed in the whispering gallery resonator On the side wall, it is used to generate plasmons. The present invention adopts the bottom porous DBR layer reflector to have a very good vertical restriction effect on the optical field of the whispering gallery resonator cavity, so the threshold power density of the whispering gallery optical pump laser prepared by the present invention is low; in addition, wrapped in the whispering gallery resonator The metal particles on the side wall of the cavity will generate plasmons to better confine the light field of the whispering gallery mode in the resonant cavity, further reducing the threshold power density, and the invention helps to realize a small-sized low-threshold laser.
Description
technical field [0001] The invention relates to the field of laser light sources, in particular to a plasmonic whispering gallery optical pump laser and a preparation method thereof. Background technique [0002] Due to the characteristics of high-speed and large-capacity information transmission and processing, integrated optoelectronics has attracted extensive attention from industry and academia. For optoelectronic integration technology, on-chip integrated lasers can provide high-efficiency light sources for optical systems to ensure normal signal transmission. light source. Whispering gallery lasers have become an ideal light source due to their small size, low threshold, high quality factor, low power consumption, and simple preparation. [0003] At present, there are still many problems to be solved before the GaN-based whispering gallery laser becomes an on-chip integrated light source. How to reduce the lasing threshold is one of the most important issues. Since ...
Claims
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IPC IPC(8): H01S5/125H01S5/343
CPCH01S5/125H01S5/34333
Inventor 赵丽霞林杉胡天贵李晓东
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI