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Plasmon echo wall optical pump laser and preparation method thereof

A technology of plasmons and whispering galleries, applied in the field of laser light sources, can solve problems that are difficult to transform into electrical devices

Active Publication Date: 2020-10-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These are only used for basic research, and it is difficult to be converted into electrical devices later

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  • Plasmon echo wall optical pump laser and preparation method thereof
  • Plasmon echo wall optical pump laser and preparation method thereof
  • Plasmon echo wall optical pump laser and preparation method thereof

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preparation example Construction

[0059] As another aspect of the present invention, a method for preparing a plasmonic whispering gallery optically pumped laser is also provided, including the following steps:

[0060] Epitaxial growth of the buffer layer, alternately stacked lightly and heavily doped layers, n-type doped GaN layer, active layer, electron blocking layer, and p-type doped GaN layer on the substrate in sequence;

[0061]The alternately stacked light and heavy doped layers are laterally etched by electrochemical etching to form the bottom porous DBR layer;

[0062] Making a metal mask on the p-type doped GaN layer;

[0063] Using the mask as a mask, the p-type doped GaN layer, the electron blocking layer, the active layer, the n-type doped layer, the bottom porous DBR layer, and the buffer layer are etched downward in sequence by plasma enhanced etching technology;

[0064] Remove the metal mask to get the whispering gallery resonant cavity;

[0065] forming a patterned metal film on the side ...

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Abstract

The invention discloses a plasmon echo wall optical pump laser and a preparation method thereof. The plasmon echo wall optical pump laser comprises a substrate; a buffer layer, positioned on the substrate; an echo wall resonant cavity, positioned on the buffer layer, sequentially comprising a bottom porous DBR layer, an n-type doped GaN layer, an active layer, an electron blocking layer and a p-type doped GaN layer from bottom to top; and a metal particle layer, formed on the side wall of the echo wall resonant cavity and used for generating plasmon. The bottom porous DBR layer reflector has avery good vertical limiting effect on the light field of the echo wall resonant cavity, so that the threshold power density of the echo wall optical pump laser prepared by the method is relatively low. Besides, the metal particles wrapped on the side wall of the echo wall resonant cavity can generate plasmon to better limit the light field of the echo wall mode in the resonant cavity, the threshold power density is further reduced, and the small-size low-threshold laser can be realized.

Description

technical field [0001] The invention relates to the field of laser light sources, in particular to a plasmonic whispering gallery optical pump laser and a preparation method thereof. Background technique [0002] Due to the characteristics of high-speed and large-capacity information transmission and processing, integrated optoelectronics has attracted extensive attention from industry and academia. For optoelectronic integration technology, on-chip integrated lasers can provide high-efficiency light sources for optical systems to ensure normal signal transmission. light source. Whispering gallery lasers have become an ideal light source due to their small size, low threshold, high quality factor, low power consumption, and simple preparation. [0003] At present, there are still many problems to be solved before the GaN-based whispering gallery laser becomes an on-chip integrated light source. How to reduce the lasing threshold is one of the most important issues. Since ...

Claims

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Application Information

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IPC IPC(8): H01S5/125H01S5/343
CPCH01S5/125H01S5/34333
Inventor 赵丽霞林杉胡天贵李晓东
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI