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Hybrid structure for surface acoustic wave device and associated production method

A technology of surface acoustic wave devices and hybrid structures, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. Problems such as the influence of frequency characteristics

Pending Publication Date: 2020-10-27
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

One of the disadvantages of this approach is the presence of parasitic acoustic waves (in the article "Characterization of bonded wafers for RF filters with reduced TCF" by B.P. Abbott et al. Proc. 2005 IEEE International Ultrasonics Symposium, Sept 19-21, 2005, pp. referred to as "spurious acoustic modes" in ), which have a negative impact on the frequency characteristics of resonators produced on hybrid substrates

Method used

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  • Hybrid structure for surface acoustic wave device and associated production method
  • Hybrid structure for surface acoustic wave device and associated production method
  • Hybrid structure for surface acoustic wave device and associated production method

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Embodiment Construction

[0036] In the descriptive part, the same reference numerals as in the figures may be used for elements of the same nature. The figures are schematic representations and are not drawn to scale for the sake of legibility. In particular, the thickness of the layer along the z-axis is not proportional to the transverse dimension along the x- and y-axes.

[0037] The present invention relates to a hybrid structure 10 suitable for the manufacture of surface acoustic wave (SAW) devices, in particular for the manufacture of devices having frequencies in the range from tens of MHz to tens of GHz.

[0038] Such as figure 1 As shown, a hybrid structure 10 according to the invention comprises an active layer 1 of piezoelectric material having a first face 1a and a second face 1b. Since the working layer 1 will be used in the subsequent production of the surface acoustic wave device, the working layer 1 is named as such. By way of example, the working layer 1 of the hybrid structure 10 ...

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Abstract

The invention relates to a hybrid structure (10) for a surface acoustic wave device, comprising a useful layer (1) of piezoelectric material, joined to a support substrate (2) having a lower coefficient of thermal expansion than the useful layer (1), and an intermediate layer (3) arranged between the useful layer (1) and the support substrate (2). The intermediate layer is a sintered composite layer (3) formed from powders of at least a first material and a second material different from the first.

Description

technical field [0001] The invention relates to the field of surface acoustic wave devices. In particular, the invention relates to hybrid structures suitable for use in the manufacture of surface acoustic wave devices. Background technique [0002] Acoustic resonator structures such as surface acoustic wave (SAW) devices use one or more interdigital transducers produced on a piezoelectric substrate in order to convert electrical signals into acoustic waves and vice versa. Such SAW devices or resonators are commonly used in filter applications. Radio frequency (RF) SAW technology provides excellent performance such as high isolation and low insertion loss. For this reason, RF SAW technology is used for RF duplexers in wireless communication applications. [0003] Improved performance of RF SAW devices is achieved, inter alia, by obtaining a frequency response that is stable with respect to temperature. The dependence of the operating frequency of a SAW device on temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/43H01L41/08H01L41/319H03H3/007H03H9/72H10N30/00H10N30/097H10N30/079
CPCH03H3/10H03H9/02559H03H9/02574H03H9/02834H10N30/073H10N30/708H03H9/02228H10N30/079H10N30/097
Inventor 佛雷德里克·阿利伯特克里斯泰勒·维蒂佐
Owner SOITEC SA