Single-material PN heterojunction and design method thereof

Abstract

The invention provides a single-material PN heterojunction and a design method thereof, and relates to the technical field of PN heterojunction material design, and the method comprises the steps: a part of atoms in a two-dimensional transition metal sulfide are replaced with replacement atoms, and the two-dimensional transition metal sulfide has a single N-type semiconductor property or a singleP-type semiconductor property; the defect type two-dimensional transition metal sulfide is formed through atom replacement, the semiconductor property of the defect type two-dimensional transition metal sulfide is changed, and the defect type two-dimensional transition metal sulfide is suitable for forming PN heterojunctions with the two-dimensional transition metal sulfide which is not subjectedto atom replacement. According to the invention, the intrinsic semiconductor two-dimensional material is enabled to have lattice imperfection through introduction of substitute atoms; defect energy levels are introduced, the same material is subjected to atom replacement to form two same-lattice materials with a P-type semiconductor property and an N-type semiconductor property, most carriers of the system are judged from energy band distribution, and a theoretical basis is provided for realization of a PN heterojunction of a single material.

Description

technical field [0001] The invention relates to the technical field of PN heterojunction material design, in particular to a single-material PN heterojunction and a design method thereof. Background technique [0002] Existing two-dimensional materials such as transition metal sulfides have a wide range of applications in many aspects, such as photocatalysts, Infrared photodetectors, nonlinear optical information processing devices and light-emitting diodes, etc. [0003] Since transition metal sulfides are two-dimensional materials, in terms of integration, the structure and function can be integrated by constructing van der Waals heterojunction, so as to prepare optically related multifunctional devices. However, the construction of heterojunctions requires high lattice matching, and coplanar heterojunctions are difficult to prepare. At present, PN heterojunctions are mostly formed by depositing two or more layers of different semiconductor material films on the same bas...

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Problems solved by technology

However, the construction of heterojunctions requires high lattice matching, and coplanar heterojunctions are difficult to prepare

At present, PN heterojunctions are mostly formed by depositing two or more layers of different semiconductor material films on the same base in sequence. When different semiconductor materials have certain differences in lattice matching, it is easy to introduce internal stress into the material, thus making the heterojunction Poor stability, reducing its electronic and optical properties, etc.

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