QLED and manufacturing method thereof and method for improving light extraction rate of QLED

A manufacturing method and a technology of emitting light, which are applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of difficult application of QLED devices and high cost

Inactive Publication Date: 2020-10-30
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, practice shows that although the above three solutions can improve the light extraction rate of QLED devices to a

Method used

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  • QLED and manufacturing method thereof and method for improving light extraction rate of QLED
  • QLED and manufacturing method thereof and method for improving light extraction rate of QLED
  • QLED and manufacturing method thereof and method for improving light extraction rate of QLED

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Effect test

Embodiment 1

[0053] (1) Clean the silicon substrate, use the mask etching process to prepare silicon nanocolumns on the silicon substrate, the radius of the nanocolumns is 100nm, the height of the nanocolumns is 400nm, the distance between the nanocolumns (between the centers of the two nanocolumns) The distance between) is 600nm.

[0054] (2) Transfer the prepared silicon substrate to the spin coater to make it horizontal, then drop the uncured PDMS onto the surface of the silicon substrate, use 1500r / min spin coating for 20s, and then place it on a heating plate at 60 degrees Celsius After heating and curing, the PDMS is removed from the substrate for later use.

[0055] (3) Preparation of SiO by sol-gel method 2 Sol, and the sol is filtered to remove larger particles. After cleaning and drying the light-emitting surface of ITO glass, SiO 2 The sol is spin-coated onto the light-emitting surface. During spin coating, first spin coating at 500r / min for 10s, then spin coating at 4000r / m...

Embodiment 2

[0059] (1) Clean the silicon substrate, use the mask etching process to prepare silicon nanocolumns on the silicon substrate, the radius of the nanocolumns is 100nm, the height of the nanocolumns is 400nm, the distance between the nanocolumns (between the centers of the two nanocolumns) The distance between) is 600nm.

[0060] (2) Transfer the prepared silicon substrate to the spin coater to make it horizontal, then drop the uncured PDMS onto the surface of the silicon substrate, use 1750r / min spin coating for 26s, and then place it on a heating plate at 64 degrees Celsius After heating and curing, the PDMS is removed from the substrate for later use.

[0061] (3) ZnO sol was prepared by sol-gel method, and the sol was filtered to remove larger particles. After cleaning and drying the light-emitting surface of the ITO glass, spin-coat the ZnO sol onto the light-emitting surface. During spin coating, first spin coating at 630r / min for 12s, then spin coating at 4400r / min for 2...

Embodiment 3

[0065] (1) Clean the silicon substrate, use the mask etching process to prepare silicon nanocolumns on the silicon substrate, the radius of the nanocolumns is 200nm, the height of the nanocolumns is 400nm, the distance between the nanocolumns (between the centers of the two nanocolumns) The distance between) is 800nm.

[0066] (2) Transfer the prepared silicon substrate to a spin coater to make it horizontal, then drop the uncured PDMS onto the surface of the silicon substrate, spin coat it at 2000r / min for 20s, and place it on a heating plate at 76 degrees Celsius After heating and curing, the PDMS is removed from the substrate for later use.

[0067] (3) Preparation of SiO by sol-gel method 2 Sol, and the sol is filtered to remove larger particles. After cleaning and drying the light-emitting surface of ITO glass, SiO 2 The sol is spin-coated onto the light-emitting surface. During spin coating, first spin coating at 760r / min for 18s, then spin coating at 5000r / min for 3...

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Abstract

The invention discloses a QLED and a manufacturing method thereof and a method for improving the light extraction rate of the QLED, and belongs to the field of light-emitting diodes. The method for improving the light extraction rate of the QLED comprises the step of manufacturing a diffraction structure composed of a nanorod array on the outer surface of a transparent substrate of the QLED. By forming the diffraction structure in the QLED, the light extraction rate of the device can be improved.

Description

technical field [0001] The present application relates to the field of light-emitting diodes, in particular, to a QLED and a method for making it and improving its light extraction rate. Background technique [0002] Due to the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life, quantum dot light-emitting diodes (QLEDs) have broad application prospects in the fields of lighting and flat panel displays. [0003] However, the current conventional QLED devices still have the problem of low light extraction efficiency. Theoretically, only about 25% of the light energy of existing conventional QLED devices exits the QLED device, while the remaining light is confined in the device in the surface plasmon mode and waveguide mode and cannot be exported. [0004] Therefore, how to improve the light extraction efficiency has become an urgent problem to be solved in the field of research and application of QLED. ...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56H01L51/50
CPCH10K50/115H10K50/85H10K71/00
Inventor 李乐付舒颍杨紫琰龙能文完亮亮
Owner 合肥福纳科技有限公司
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