Combined sleeve of single crystal furnace and single crystal furnace

Abstract

The invention discloses a combined sleeve of single crystal furnace and single crystal furnace. The combined sleeve comprises an inner cylinder, an outer cylinder and a bottom cylinder, wherein the upper portion and the lower portion of the outer cylinder are opened, the outer cylinder is arranged on the periphery of the inner cylinder in a sleeving mode, the bottom cylinder is arranged at the position of an opening in the bottom end of the outer cylinder, the bottom cylinder comprises an annular base plate and a lower cylinder, and the inner cylinder and the lower cylinder are both in an inverted cone shape; the upper end of the inner cylinder is connected with the upper end of the outer cylinder, the outer edge of the annular base plate is connected with the lower end of the outer cylinder in a sealed mode, the inner edge of the annular base plate is connected with the upper portion of the lower cylinder, and the lower end of the inner cylinder is fixedly connected with the upper surface of the annular base plate. According to the combined sleeve disclosed by the embodiment of the invention, the stability of solid, liquid and gas three-phase junctions on the surface of the silicon melt can be kept, so that the stability of a temperature field is kept, the defect-free growth of a crystal bar is facilitated; after the surface of the silicon melt exceeds a certain height, the cooling of the crystal bar can be accelerated, so that the crystal bar quickly passes through a defect nucleation growth temperature interval; and finally, the high-quality crystal bar is prepared.

Description

technical field [0001] The invention relates to the technical field of crystal bar preparation, in particular to a combined sleeve of a single crystal furnace and a single crystal furnace. Background technique [0002] With the continuous improvement of the manufacturing process of the microelectronics industry, there are higher requirements for the quality of silicon wafer materials, and good quality means that crystal defects in the ingot must be well controlled. The crystal defects in the ingot are mainly divided into two categories, one is the defect formed by the accumulation of supersaturated gaps, and this type of defect will not affect the gate oxide integrity (GOI for short) of MOS components; The other type of defects is formed by the accumulation of vacancies. This type of growth defect has a great relationship with the yield of GOI. Common vacancy defects include COPs (crystal originated particles), FPD (flow pattern defects), LSTDs (laser scattering tomography d...

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Problems solved by technology

[0004] In view of this, the present invention provides a combined sleeve of a single crystal furnace and a single crystal furnace, which can solve the problem that the unreasonable setting of the guide tube in the prior art affects the type and distribution of defects in the crystal ingot, and is not conducive to the ingot of the crystal rod. The problem of defect growth

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