Light-emitting diode epitaxial wafer and preparation method thereof
A technology of light-emitting diodes and epitaxial wafers, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as poor uniformity of light-emitting diodes
Active Publication Date: 2020-11-03
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
As a result, in the light-emitting diode, electrons and holes are mainly concentrated on the side of the light-emitting layer close to the p-type GaN layer to emit light, and the light-emitting uniformity of the light-emitting diode is poor
Method used
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[0029] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0030] figure 1 It is a schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present disclosure. refer to figure 1 It can be seen that the embodiment of the present disclosure provides a light emitting diode epitaxial wafer, the light emitting diode epitaxial wafer includes a substrate 1 and an epitaxial layer 2 grown on the substrate 1, the epitaxial layer 2 includes n-type epitaxial layers sequentially stacked on the substrate 1 GaN layer 21 , light emitting layer 22 and p-type GaN layer 23 .
[0031] The light-emitting layer 22 includes a first composite layer 221 and a second composite layer 222 sequentially stacked on the n-type GaN layer 21, and the first composite layer 22...
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Abstract
The invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of light-emitting diodes. A light-emitting layer comprises a first composite layer and a second composite layer. And a first GaN barrier layer in the first composite layer slightly blocks electrons, so that the electron migration speed is reduced. A first InGaN well layer with the larger thickness provides a migration space for more electrons and accumulates the electrons, and the electrons migrated to the second composite layer and compounded are reduced, so holeswith the low migration speed have enough space to migrate to the second composite layer and the first composite layer which comprise a plurality of second InGaN well layers and third GaN barrier layers which are stacked alternately to be compounded with the first composite layer. The thickness of a second GaN barrier layer is smaller than that of a third GaN barrier layer, more holes can enter the first composite layer close to the n-type GaN layer to be composited with more electrons to emit light, the electrons and the holes are not concentrated on the edge, close to the p-type GaN layer, of the light-emitting layer to emit light, and the light-emitting uniformity of the epitaxial wafer can be improved.
Description
technical field [0001] The present disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. A light-emitting diode epitaxial wafer usually includes a substrate and an epitaxial layer grown on the substrate. The epitaxial layer at least includes a GaN buffer layer, an n-type GaN layer, a light-emitting layer, and a p-type GaN layer stacked on the substrate in sequence. The light-emitting layer usually includes alternately stacked InGaN well layers and GaN barrier layers. Under the action of current, electrons in the n-type GaN layer and holes in the p-type GaN layer will migra...
Claims
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IPC IPC(8): H01L33/06H01L33/14H01L33/00H01L33/32
CPCH01L33/0075H01L33/06H01L33/145H01L33/325
Inventor 姚振从颖董彬忠李鹏
Owner HC SEMITEK ZHEJIANG CO LTD