Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The present disclosure provides a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of light-emitting diodes. The light-emitting layer arrangement includes a first composite layer and a second composite layer. The first GaN barrier layer in the first composite layer slightly blocks electrons, slowing down the electron migration speed. The thicker first InGaN well layer provides more migration space for electrons and accumulates electrons, reducing the number of electrons migrating to the second recombination layer and recombining, so that the slower-moving holes have enough space to migrate to include multiple The alternately stacked second InGaN well layers and the third GaN barrier layers are combined with the second composite layer and the first composite layer. The thickness of the second GaN barrier layer is smaller than the thickness of the third GaN barrier layer, more holes can enter the first composite layer close to the n-type GaN layer and combine with more electrons to emit light, and electrons and holes are not concentrated in the luminescence The layer is close to the edge of the p-type GaN layer to emit light, which can improve the uniformity of light emission of the epitaxial wafer.

Description

technical field [0001] The present disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. A light-emitting diode epitaxial wafer usually includes a substrate and an epitaxial layer grown on the substrate. The epitaxial layer at least includes a GaN buffer layer, an n-type GaN layer, a light-emitting layer, and a p-type GaN layer stacked on the substrate in sequence. The light-emitting layer usually includes alternately stacked InGaN well layers and GaN barrier layers. Under the action of current, electrons in the n-type GaN layer and holes in the p-type GaN layer will migra...

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Problems solved by technology

As a result, in the light-emitting diode, electrons and holes are mainly concentrated on the side of the light-emitting layer close to the p-type GaN layer to emit light, and the light-emitting uniformity of the light-emitting diode is poor

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