Packaging structure and preparation process thereof

Abstract

The invention relates to a packaging structure and a process for preparing the packaging structure, and the packaging structure comprises a substrate which is provided with a surface; an on-chip system, wherein the on-chip system is arranged on the surface of the substrate; a thin film layer, arranged on one side, far away from the surface, of the on-chip system, and the on-chip system being coated with the thin film layer; a shielding layer, arranged on the side, away from the surface, of the thin film layer, and the shielding layer wrapping the thin film layer; wherein the thin film layer isformed on the system-on-chip through a chemical vapor deposition method, and the thin film layer insulates and isolates the shielding layer and the system-on-chip.

Description

technical field [0001] The invention relates to the technical field of system-in-package (SIP), in particular to a packaging structure with a new packaging film layer and a preparation process thereof. Background technique [0002] SIP (system-in-package, system-in-package) is a new packaging technology based on SOC (System-on-a-chip, system-on-a-chip), which consists of one or more bare chips and possible passive components. High-performance modules are housed in a single package, including the stacking of these chips together to function as a system. [0003] SIP packaging comprehensively utilizes existing chip resources and the advantages of various advanced packaging technologies to organically combine several chips to form a system, and develops a feasible idea and method for low-cost system integration, which has high packaging efficiency and low system cost. , low power consumption and low noise, better solve the problems in SOC such as process compatibility, signal ...

AI Technical Summary

Problems solved by technology

[0008] (1) Using the pressure injection molding process, it usually requires high temperature and high pressure to inject the resin into the cavity to fill the covering resin. The usual pressure is greater than 5MPa, the temperature is between 150-200°C, and the mold clamping pressure is >30T. Internal precision components and gold wires are damaged and scrapped;

[0009] (2) When filling the covering resin, if it is not filled well, there will be air bubbles inside, which will cause defects;

[0010] (3) Conformal shielding usually uses thermosetting resin materials such as epoxy resin, and high-temperature rapid curing causes adverse problems such as shrinkage and warping. At the same time, it also requires precise abrasive tooling, and the degrinding process is complicated;

[0011] (4) The thinnest molding thickness of this conformal shielding technology is usually more than 0.1mm, and the formation of this shielding layer by sputtering process also has large investment in equipment, low efficiency, and the targeting of sputtering leads to and the problem of uneven thickness on the bottom surface

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