Semiconductor cavity and annealing device

Abstract

The embodiment of the invention provides a semiconductor cavity and an annealing device. The semiconductor cavity comprises a cavity body and a purging device used for removing metal pollutants in thecavity body, wherein the purging device comprises at least two air inlet pipelines and a uniform flow structure, and the uniform flow structure is arranged in the cavity body and is provided with a uniform flow cavity. The at least two air inlet pipelines are both communicated with the uniform flow cavity and used for conveying at least two kinds of gas to the uniform flow cavity, so that the atleast two kinds of gas flow into the cavity after being mixed in the uniform flow cavity, and the at least two kinds of gas are used for reacting to generate free radicals capable of being combined with the metal pollutants. According to the semiconductor cavity and the annealing device provided by the embodiment of the invention, the metal pollutants in the cavity can be effectively removed, thecavity does not need to be disassembled, assembled and cleaned, and the equipment maintenance time and the equipment operation cost are reduced, so that the normal operation time of equipment is prolonged, and the productivity is improved; and in addition, uncertainty and unstable factors in the subsequent technological process are reduced, and the technological reliability is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor chamber and an annealing device. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology and the continuous reduction of feature size, continuous improvement of process equipment and continuous optimization of process are required. For example, higher requirements are put forward for various process indicators including metal pollution, especially in the processing link. In the process of processing and molding high-purity quartz materials including chambers, metals are often inevitably introduced. sources of contamination, thereby worsening post-process metal contamination levels. [0003] For example, for process gas H 2 In the medium and high temperature annealing process, the activity of metal ions is enhanced at high temperature, and the corresponding amount of metal pollution detected...

AI Technical Summary

Problems solved by technology

[0004] However, the above disassembly and cleaning method not only increases the maintenance time of the equipment, shortens the normal operation time of the equipment in the cycle, and reduces the production capacity; moreover, it cannot guarantee that the residual and continuous seepage metal pollution can be effectively removed after disassembly and cleaning. Increases the uncertainty and unstable factors in the follow-up process; in addition, more replacement spare parts need to be stored, which increases equipment operating costs

Images