Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Random laser and preparation method and application thereof

A random laser and substrate technology, applied in the field of random lasers, can solve problems such as instability and narrow optical frequency

Active Publication Date: 2020-11-24
SHENZHEN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a kind of random laser, the present invention also provides the preparation method of this random laser and its application as light source, by providing a kind of novel random laser, to solve the light problem existing in existing laser Narrow tuning of frequency, inherent instability, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Random laser and preparation method and application thereof
  • Random laser and preparation method and application thereof
  • Random laser and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] In a second aspect, the present invention provides a method for preparing a random laser, comprising the following steps:

[0039] Synthesis of graphdiyne: Provide hexaethynylbenzene as a synthetic monomer, dissolve hexaethynylbenzene in an organic solvent to obtain a hexaethynylbenzene solution, provide a substrate and place it in an organic solvent to obtain a substrate solution, heat the substrate solution and maintain it at 55 ~ 65°C, adding the hexaethynylbenzene solution to the insulated substrate solution at one time and reacting for 1 to 5 days to prepare graphdiyne attached to the substrate;

[0040]Exfoliation of graphdiyne film: transfer the graphdiyne attached to the substrate to ferric chloride solution for wet exfoliation to obtain graphdiyne film;

[0041] Preparation of random laser: use graphdiyne film as gain medium to prepare random laser;

[0042] The base is made of copper.

[0043] Preferably, in the step of synthesizing graphdiyne, the organic s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
areaaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a random laser, which comprises a gain medium, and is characterized in that the gain medium is a graphite diyne nanosheet. According to the random laser disclosed by the invention, the graphdiyne nanosheet is used as the gain medium; the graphdiyne nanosheet shows excellent light emission performance in a visible light region, photon transition complies with three-energy-level energy structure regulations, and meanwhile, photons with broadband emission spectrum of 450-700nm and wavelength of less than 400nm are shown to be an effective excitation source. The invention also provides a preparation method and application of the random laser.

Description

technical field [0001] The invention relates to the technical field of random lasers, in particular to a random laser, and also relates to a preparation method and application of the random laser. Background technique [0002] The solid-state laser pumped by a semiconductor laser is a laser generating device that uses a laser diode sequence as a pump source and a solid-state laser material as a gain medium. All-solid-state lasers have the advantages of small size, light weight, high efficiency, stable performance, good reliability, long life, and high beam quality, and the market demand is huge. All-solid-state laser technology is currently one of the few high-tech fields in my country that has overall advantages from material source to laser system integration. It has a good foundation for accelerated development in some fields, but in the absence of mirrors , there is a huge unmet demand for coherent laser sources provided by disordered gain media. [0003] Random laser i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01S3/16
Inventor 张晗鲍文莉康建龙张家宜
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com