Susceptor, device and method for epitaxial growth of silicon wafer

An epitaxial growth and silicon wafer technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of uneven thickness of epitaxial layer and poor flatness of epitaxial silicon wafer, and achieve good flatness and uniform thickness. , the effect of balanced growth rate

Active Publication Date: 2021-09-07
XIAN ESWIN SILICON WAFER TECH CO LTD
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  • Abstract
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Problems solved by technology

[0008] In order to solve the above technical problems, the embodiment of the present invention expects to provide a susceptor, device and method for epitaxial growth of silicon wafers, which can solve the problems of epitaxial layer in the process of epitaxial growth caused by different crystal orientations of silicon wafers in a simple and effective way. The uneven thickness of the epitaxial silicon wafer makes the flatness of the epitaxial silicon wafer poor

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  • Susceptor, device and method for epitaxial growth of silicon wafer
  • Susceptor, device and method for epitaxial growth of silicon wafer
  • Susceptor, device and method for epitaxial growth of silicon wafer

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0034] see image 3 , which shows a schematic diagram of an existing device 1 for epitaxial growth of a silicon wafer W. Such as image 3As shown, the device 1 may include: a base 10, which is used to carry a silicon wafer W; a base support frame 20, which is used to support the base 10 and drive the base during epitaxial growth. 10 rotates around the central axis X at a certain speed, wherein during the rotation of the base 10, the silicon wafer W rotates around the central axis X together with the base 10, that is to say, the silicon wafer W remains stationary relative to the base 10, Thus, a small gap G is required between the radial edge of the susceptor 10 and the adjacent part 10A (typically the preheating ring); the upper quartz bell 30A and the lower quartz bell 30B,...

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Abstract

The embodiment of the present invention discloses a base, device and method for epitaxial growth of silicon wafers, and relates to the technical field of epitaxial growth of silicon wafers. The base includes: a disc-shaped bearing part for carrying the silicon wafers ; An annular peripheral edge extending radially outward from the disc-shaped bearing portion, wherein a plurality of through holes are formed in the annular peripheral edge, so that the opening ratio of the annular peripheral edge is from <100 of that of the silicon chip >The radial direction corresponding to the crystal direction increases gradually to the radial direction corresponding to the <110> crystal direction adjacent to the <100> crystal direction of the silicon wafer. The invention can obtain epitaxial silicon wafer with better flatness.

Description

technical field [0001] The invention relates to the field of epitaxial growth of silicon wafers, in particular to a base, device and method for epitaxial growth of silicon wafers. Background technique [0002] The epitaxial growth process of silicon wafers is an important process in the semiconductor chip manufacturing process. This process refers to growing a layer of crystal-free primary particles (Crystal Originated Particles, COP) defect and oxygen-free precipitated silicon single crystal layer. Epitaxial growth of silicon wafers mainly includes growth methods such as vacuum epitaxial deposition, vapor phase epitaxial deposition, and liquid phase epitaxial deposition, among which vapor phase epitaxial deposition is the most widely used. If not otherwise stated, the epitaxial growth mentioned in the present invention refers to the epitaxial growth accomplished by vapor phase epitaxial deposition. [0003] For the epitaxial growth of silicon wafers, flatness is an import...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/12C30B29/06
CPCC30B25/12C30B29/06
Inventor 俎世琦方圭哲金柱炫王力
Owner XIAN ESWIN SILICON WAFER TECH CO LTD
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