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Miniaturized SIW resonant cavity and wide stop band SIW filter formed by same

A resonant cavity and filter technology, which is applied to waveguide-type devices, electrical components, circuits, etc., can solve the problems of large size of SIW filter and difficulty in realizing wide stop-band characteristics, and achieve the effect of compact size.

Active Publication Date: 2020-11-27
CHENGDU PINNACLE MICROWAVE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the miniaturized SIW resonator and the wide stopband SIW filter provided by the present invention solve the problem that the existing SIW filter is too large in size and difficult to achieve wide stopband characteristics

Method used

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  • Miniaturized SIW resonant cavity and wide stop band SIW filter formed by same
  • Miniaturized SIW resonant cavity and wide stop band SIW filter formed by same
  • Miniaturized SIW resonant cavity and wide stop band SIW filter formed by same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] like Figure 1-3 As shown, a miniaturized SIW resonant cavity includes a top substrate 1 and a bottom substrate 2, and the top substrate 1 and the bottom substrate 2 are surrounded by first metallized via holes 3 to form electric walls to form the miniaturized SIW resonant cavity. Rectangular cavity structure;

[0035] A rectangular metal patch 4 is arranged in the center of the surface of the bottom substrate 2, and a second metallized via hole 5 is arranged around the rectangular metal patch 4, and the second metallized via hole 5 is connected to the bottom substrate 2. underlying metal connections.

[0036] The miniaturized SIW resonant cavity in this embodiment adopts standard PCB processing technology, and uses a double-layer substrate to realize the recessed scheme of the bottom layer; wherein, the substrate materials of the top substrate 1 and the bottom substrate 2 are Rogers5880, the dielectric constant is 2.2, and the loss The angle tangent is 0.0009; the th...

Embodiment 2

[0039] like Figure 4-5 As shown, a wide stopband SIW filter comprising the above-mentioned miniaturized SIW resonator includes cascaded first miniaturized SIW resonator, second miniaturized SIW resonator and third miniaturized SIW resonator;

[0040] The top and bottom substrates of the first miniaturized SIW resonator, the second miniaturized SIW resonator, and the third miniaturized SIW resonator are all processed into a unified whole through PCB processing technology, and serve as the top substrate of the wide stopband SIW filter and the bottom substrate, the thicknesses of the top substrate and the bottom substrate are respectively 0.127mm and 0.508mm;

[0041] The top substrate of the above-mentioned wide stopband SIW filter is provided with an input port 6 and an output port 7; the input port 6 and the output port 7 are all made of coplanar waveguide wires with an impedance of 50 ohms, and the common The plane waveguide is connected to the first miniaturized SIW resona...

Embodiment 3

[0046] Utilize the filter structure that the present invention designs, adopt the structure parameter as shown in table 1 to carry out simulation, obtain as Figure 6 The S parameter response of the filter is shown, wherein (a) and (b) are the S parameter response curves of 5-15GHz and 5-30GHz respectively, the center frequency of the filter is set to 10GHz, and the 3dB bandwidth is 1.14GHz. It can be seen that the miniaturized filter achieves a very wide stopband bandwidth, and its high-order mode resonant frequency is 29.3GHz, achieving a suppression performance close to 3dB stopband bandwidth.

[0047] Table 1: Structure parameters of wide stopband filter for third-order miniaturization

[0048] l 1

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Abstract

The invention discloses a miniaturized SIW resonant cavity and a wide stop band SIW filter formed by the same. A novel capacitive loading scheme is provided; on the basis of a traditional SIW resonantcavity, part of the bottom layer metal in the center of the cavity is sunken inwards, namely, the distance between part of the bottom layer metal and the bottom layer metal is reduced, and capacitiveloading is performed on the TE101 mode of the SIW resonant cavity, so that the resonant frequency of the TE101 mode is reduced, and miniaturization of the SIW resonant cavity is realized. As the capacitive loading position is located in the center of the cavity, the capacitive loading hardly influences the resonant frequencies of the TE201 mode and the TE102 mode, and therefore the high-order resonant frequency is far away from the main mode frequency; the three resonant cavities are cascaded to form a three-order filter, so that the miniaturization design of the filter can be realized, and meanwhile the filter has the characteristic of wide stop band.

Description

technical field [0001] The invention belongs to the technical field of waveguide filter design, in particular to a miniaturized wide stopband substrate integrated waveguide filter. Background technique [0002] Substrate Integrated Waveguide (SIW) filters have received extensive attention from academia and industry over the past few decades due to their excellent filtering characteristics, such as high quality, large capacity power, and easy planar circuit integration. continent. Although it has advantages in many aspects, the SIW filter also has natural shortcomings. First, its size is relatively large compared to the microstrip filter, and it will be limited in size in system applications; second, the high-order SIW filter The mode frequency is close to the passband frequency, and it is difficult to realize the stopband characteristic. As far as wireless communication technology continues to develop, miniaturization and high performance are the development trend of futur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/212H01P1/208
CPCH01P1/208H01P1/212
Inventor 董元旦朱谊龙杨涛
Owner CHENGDU PINNACLE MICROWAVE CO LTD
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