Quartz tube assembly and vacuum inspection method thereof
An inspection method and technology for quartz tubes, which are applied in vacuum gauges, chemical instruments and methods, crystal growth, etc., can solve the problem that the vacuum in the quartz tube cannot be guaranteed to meet the requirements.
Active Publication Date: 2020-12-01
北京智创芯源科技有限公司
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Problems solved by technology
Since the quartz sleeve is located inside the quartz tube, the outer diameter of the quartz sleeve is smaller than the inner diameter of the quartz tube. When sintering at high temperature, the sintering effect of the two can only be observed with the naked eye. During the cooling process, due to the stress of the quartz tube and the quartz sleeve The difference may cause a gap between the quartz sleeve and the quartz tube, and the vacuum in the quartz tube cannot be guaranteed to meet the requirements
Method used
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specific Embodiment approach
[0036] As a specific implementation, the quartz tube assembly to be inspected after obtaining the initial vacuum seal includes:
[0037] Step S1011: obtaining the quartz tube.
[0038] Step S1012: placing mercury at the bottom of the quartz tube, placing a wafer in the middle of the quartz tube, and putting the quartz sleeve into the top of the quartz tube to obtain a quartz tube assembly to be processed.
[0039] The wafer is a mercury cadmium telluride wafer.
[0040] It can be understood that the outer diameter of the quartz sleeve is smaller than the inner diameter of the quartz tube.
[0041] Step S1013: vacuumize the quartz tube assembly to be processed, so that the vacuum degree of the quartz tube assembly to be processed is the first vacuum degree.
[0042] Specifically, the vacuuming of the quartz tube assembly to be processed includes:
[0043] The quartz tube assembly to be processed is installed on the exhaust table of the high vacuum pump group, and the high va...
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The invention discloses a quartz tube assembly and a vacuum inspection method thereof. The method comprises the steps of obtaining the quartz tube assembly to be inspected after primary vacuum sealing, the quartz tube assembly having a first vacuum degree, and the quartz tube assembly comprising a quartz tube, mercury located at the bottom of the quartz tube, a wafer located in the middle of the quartz tube and a quartz sleeve located in the top of the quartz tube; vacuumizing the quartz tube assembly to obtain a second vacuum degree of the quartz tube assembly after vacuumizing again; comparing the second vacuum degree with the first vacuum degree; and if the second vacuum degree is not greater than the first vacuum degree, determining that the quartz tube assembly is qualified. Accordingto the invention, the to-be-inspected quartz tube assembly is obtained, and the quartz tube assembly is vacuumized to obtain the second vacuum degree, whether the quartz tube and the quartz sleeve are tightly sealed or not is judged by utilizing the influence of mercury volatilization on vacuum, and when the second vacuum degree is not greater than the first vacuum degree, it is indicated that nogap exists between the quartz sleeve and the quartz tube, the quartz sleeve is in a high-vacuum state, and the quartz sleeve is qualified through inspection.
Description
technical field [0001] The present application relates to the technical field of quartz tube sealing, in particular to a quartz tube assembly and a vacuum inspection method thereof. Background technique [0002] Mercury cadmium telluride material is a kind of semiconductor material, which has the advantages of adjustable bandgap width, detection spectral range extending from short-wave band to very long-wave band, and high photoelectric detection efficiency. Material. In order to meet the performance of infrared focal plane detectors, heat treatment is usually used to adjust the stoichiometric ratio and composition of HgCdTe wafers. [0003] Heat treatment requires that the quartz tube must be in a vacuum environment, otherwise an oxide layer will be formed on the surface of the wafer. The oxide layer not only hinders the exchange of atoms inside and outside the surface layer, but also affects the adhesion of the surface film layer in the subsequent passivation process of t...
Claims
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Patent Timeline
Login to View More IPC IPC(8): G01L21/00G01N7/00C30B33/02C30B29/46
CPCC30B29/46C30B33/02G01L21/00G01N7/00
Inventor 不公告发明人
Owner 北京智创芯源科技有限公司