Unlock instant, AI-driven research and patent intelligence for your innovation.

Cyclical epitaxial deposition system

A deposition system and cyclic technology, applied in the field of cyclic epitaxial deposition systems, can solve the problems of long process time, inability to apply continuous production, components or devices that are not suitable for mass production, etc., and achieve the effect of shortening deposition time.

Inactive Publication Date: 2020-12-04
GOLD CARBON CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, compared with chemical vapor deposition, the process time of atomic layer deposition is longer, and it cannot be applied to continuous production at present, and it is not suitable for the manufacture of components or devices that require mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cyclical epitaxial deposition system
  • Cyclical epitaxial deposition system
  • Cyclical epitaxial deposition system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The following are specific examples to illustrate the implementation of the "circulatory epitaxial deposition system" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

[0029] Please refer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a cyclical epitaxial deposition system. The cyclical epitaxial deposition system comprises a coating cavity, a conveying device and a gas distribution module, the conveying device is used for enabling a base material to continuously pass through the coating cavity along a transmission path. The gas distribution module is arranged in the coating cavity and located above thetransmission path. The gas distribution module comprises a plurality of precursor gas nozzles and a plurality of flushing gas nozzles which are not communicated with one another, so that at least oneprecursor gas and at least one purging gas are respectively guided to different areas on the base material at the same time.

Description

technical field [0001] The invention relates to an epitaxial deposition system, in particular to a circular epitaxial deposition system utilizing the principle of atomic layer deposition. Background technique [0002] Atomic layer deposition (atomic layer deposition) is a technique for growing high-quality thin films in the vapor phase. Compared with the film layer formed by chemical vapor deposition or physical vapor deposition, the film layer formed by atomic layer deposition has higher compactness, thickness uniformity and step coverage. In addition, the thickness of the film layer can be precisely controlled by atomic layer deposition. Therefore, atomic layer deposition technology has been applied in the manufacturing process of electronic components. [0003] During atomic layer deposition, in each coating cycle, two different precursor gases are sequentially injected into the reaction chamber at different time points, instead of being injected into the reaction chamb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45544C23C16/45565C23C16/45561H01J37/3244C23C16/45551C23C16/0209C23C16/0227C23C16/545C30B25/14C30B25/025C30B25/10C23C16/463H01J2237/002C23C16/4408H01J2237/3321
Inventor 谢建德林友复赵家鸿
Owner GOLD CARBON CO LTD