Method for rapid depositing barium tungstate micron film at low-temperature

A barium tungstate, fast technology, applied in chemical instruments and methods, solution from liquid solvent at room temperature, single crystal growth, etc., can solve the problems of destroying the original shape of the film, affecting the luminescence characteristics of the film, and affecting the application of the film. To achieve the effect of shortening the film deposition time, avoiding a large number of nucleation and precipitation, and uniform heating

Inactive Publication Date: 2009-02-04
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But currently for BaWO 4 There are relatively few studies on the preparation of thin films, and the existing preparation of BaWO 4 Thin film methods are limited to chemical vapor deposition (CVD), vacuum evaporation, sputtering and dip-painting processes
However, the above-mentioned process has high requirements on deposition conditions, such as vacuum and high temperature, which inevitably destroy the original morphology of the film. The luminescent properties of thin films affect their applications
Recently, Yoshimura M. et al. successfully prepared BaWO on tungsten wafers by electrochemical method and hydrothermal-electrochemical method. 4 However, the electrochemical method is selective to the substrate of the film, which must be a conductive substrate, thus affecting the BaWO 4 Further applications of thin films

Method used

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  • Method for rapid depositing barium tungstate micron film at low-temperature
  • Method for rapid depositing barium tungstate micron film at low-temperature
  • Method for rapid depositing barium tungstate micron film at low-temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0024] 1) Clean the FTO glass successively with toluene, acetone, and ethanol in an ultrasonic cleaner for 15 minutes, rinse it with deionized water, soak it in ethanol, and store it for later use;

[0025] 2) Dissolve 0.03mol of complexing agent EDTA-2Na in 60ml of deionized water, stir and dissolve, then add 0.03molBa(NO 3 ) 2 ·6H 2 O, keep stirring to obtain clear and transparent solution A1;

[0026] 3) Add 10mol / L NaOH solution and 30% HNO to solution A1 3 solution, adjusting the pH value of solution A1 to 8 to obtain solution B1;

[0027] 4) To 0.03mol Na 2 WO 4 2H 2 Add 20ml of deionized water to O, stir until completely dissolved, then add it to solution B1, add deionized water to 100ml, and stir for 1 minute to obtain a clear and transparent solution C1, and move the C1 solution to a jar;

[0028] 5) Rinse the pre-treated substrate with deionized water, put it into solution C1, and make it float on the surface of the solution, cover the jar, and put it into a h...

Embodiment 2

[0031] 1) Clean the FTO glass successively with toluene, acetone, and ethanol in an ultrasonic cleaner for 15 minutes, rinse it with deionized water, soak it in ethanol and store it for later use;

[0032] 2) Dissolve 0.02mol of complexing agent EDTA-2Na in 60ml of deionized water, stir and dissolve, then add 0.02molBa(NO 3 ) 2 ·6H 2 0, continuous stirring obtains clear and transparent solution A2;

[0033] 3) Add 10mol / L NaOH solution and 30% HNO to solution A2 3 solution, adjust the pH value of solution A2 to 8 to obtain solution B2;

[0034] 4) To 0.02mol Na 2 WO 4 2H 2 Add 20ml of deionized water to O, stir until completely dissolved, then add it to solution B2, add deionized water to 100ml, and stir for 1 minute to obtain a clear and transparent solution C2, and move the C2 solution to a jar;

[0035] 5) Rinse the pre-treated substrate with deionized water, put it into solution C2, and make it float on the surface of the solution, cover the jar, and put it into a h...

Embodiment 3

[0038]1) Clean the FTO glass successively with toluene, acetone, and ethanol in an ultrasonic cleaner for 15 minutes, rinse it with deionized water, soak it in ethanol, and store it for later use;

[0039] 2) Dissolve 0.01mol of complexing agent EDTA-2Na in 60ml of deionized water, stir and dissolve, then add 0.01molBa(NO 3 ) 2 ·6H 2 O, continuous stirring obtains clear and transparent solution A3;

[0040] 3) Add 10mol / L NaOH solution and 30% HNO to solution A3 3 solution, adjust the pH value of solution A3 to 13 to obtain solution B3;

[0041] 4) To 0.01mol Na 2 WO 4 2H 2 Add 20ml of deionized water to O, stir until completely dissolved, then add it to solution B3, add deionized water to 100ml, and stir for 1 minute to obtain a clear and transparent solution C3, and move the C3 solution to a jar;

[0042] 5) Rinse the pre-treated substrate with deionized water, put it into solution C3, and make it float on the surface of the solution, cover the jar, and put it into a ...

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Abstract

The invention relates to a method for quickly depositing barium tungstate micro film at low temperature, which belongs to the technical field of functional film material preparation. The prior barium tungstate film preparation methods have quite high requirement for the deposition condition, need vacuum, high temperature and other conditions, and restrict the substrates to be conductive. The method takes EDTA-2Na as the complexing agent and prepares the micro barium tungstate film which has pure white tungsten ore structure, small, even and compact grains and is highly crystallized in microwave water bath which is lower than 100 DEG C within 30min. The method has no special requirement for the substrates, i.e. conductive or non-conductive substrates are applicable; adopts a microwave heating method, has simple process, and does not need vacuum, high temperature and other conditions; in addition, the solution is evenly heated, which greatly shortens the deposition time of the film; that EDTA-2Na is adopted as the complexing agent effectively prevents barium ions and wolframate radical ions from being largely nucleated and deposited in the solution.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin film materials, and specifically relates to a micron-sized tungstic acid obtained by depositing ethylenediaminetetraacetic acid disodium (EDTA-2Na) as a complexing agent at a relatively low temperature and within a relatively short period of time. Barium thin film method. Background technique [0002] Barium tungstate (BaWO 4 ) crystal is a promising Raman laser crystal and an important optoelectronic functional material with stimulated Raman scattering properties (SRS). In 1999, T.T.Basiev, A.A.Sobol, P.G.Zverev et al. measured the Raman spectra of tungstate and other types of crystals and found that BaWO 4 The Raman spectrum of the crystal has a large Raman scattering cross section and Raman scattering intensity, so BaWO 4 The crystal will have a large Raman gain under the action of nanosecond pulse and picosecond pulse laser, and BaWO 4 The crystal has a wide range of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B7/14
Inventor 汪浩王锐严辉李坤威朱满康
Owner BEIJING UNIV OF TECH
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