126results about How to "Short deposition time" patented technology

The invention provides a method of a carbon nanotube for modifying a polyacrylonitrile-based carbon fiber interface produced in China. The technology includes four parts: (1) surface treatment of thedomestic polyacrylonitrile-based carbon fiber: firstly treating and removing colloid on the surface of carbon fiber at the temperature of 600-800 DEG C and then using the mixed acid of nitric acid andsulfuric acid to remove the impurities on the surface of fiber; (2) preparation of domestic carbon fiber preform where the carbon nanotube grows in situ: firstly putting treated carbon fiber needle preform in the organic solution of catalyst precursor and then growing the carbon nanotube in situ in a chemical vapor deposition furnace; (3) densification of preform: adopting chemical vapor infiltration process to densify the preform and depositing the preform for 200-350h so that the density of the preform reaches 1.70-1.75g/cm<3>; and (4) high-temperature heat treatment: putting the material in a vacuum carbonization furnace, heating to the temperature of 2, 000-2, 300 DEG C at the heating rate of 30-50 DEG C/h under the protection of nitrogen, argon and other gases and preserving the heatfor 3-5h, and finally, the finished product is obtained.

An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

The invention provides a method for preparing germanium nano cubic crystals through ionic liquid electro-deposition and relates to a preparation method of nano cubic crystal germanium. The method is used for solving the technical problem of difficulty in control and repetition in synthesis of nano cubic particles of germanium by the existing solvent synthetic method. The method comprises the following steps of: building an electrolytic tank for ultraviolet assisted electro-deposition in a glove box, wherein the electrolytic tank contains ionic liquid EmimTF2N electrolyte containing high-purity GeCl4; and then carrying out irradiation by using an ultraviolet lamp with the wavelength of 365nm; firstly, performing cyclic voltammetry curve scanning and then keeping ultraviolet irradiation, and then carrying out potentiostatic method based electro-deposition, and finally, cleaning the sample by using anhydrous isopropyl alcohol, thus obtaining the germanium nano cubic crystals. The method provided by the invention is simple in process and convenient to operate. Besides, the obtained germanium thin film deposited with germanium nano cubic crystals can be applied to a photoluminescent device and the like.

The invention provides a long-acting antibacterial multifunctional coating based on bionic dopamine as well as a preparation method and an application thereof. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a base material by using acetone, absolute ethyl alcohol and ultrapure water in sequence; immersing the obtained base material into dopamine rapid deposition liquid for reaction to obtain a base material coated with a polydopamine coating; washing the obtained base material with deionized water, and drying; soaking the obtained base material in a multifunctional coating aqueous solution for reaction, and obtaining a functional coating on the surface of the base material; washing the obtained base material with ultrapure water and then drying; wherein Cu<2+> and H2O2 are dissolved in the dopamine rapid deposition liquid, and the multifunctional coating aqueous solution contains a hydrophilic polymer or a zwitterionic polymer. The preparation process is simple, conditions are mild, deposition preparation time is greatly shortened, and the method is suitable for large-scale industrial production.

The invention discloses a microalgae collecting device, comprising at least two layers of collecting plates which are separated from each other in a vertical direction, wherein a first end of each of the at least two layers of collecting plates is supported on a first rod, while a second end thereof is supported on a second rod respectively; the first end of each layer of the collecting plate is equipped with a convex corner for preventing deposited microalgae from flowing out; and the second end of each layer of the collecting plate is an opened end good for the microalgae to flow out. When microalgae is deposited, the second rods are pulled upwards so that each layer of the collecting plate is inclined at a first inclination angle with respect to the horizontal direction, in this way, microalgae is deposited at the convex corner at the first end of each layer of the collecting plate; and when microalgae is collected, the first rods are pulled upwards so that each layer of the collecting plate is inclined at a second inclination angle with respect to the horizontal direction, in this way, deposited microalgae flows into a photo-biologic reactor from the opened second end of each layer of the collecting plate. The microalgae collecting device and the microalgae collecting method disclosed by the invention shorten the deposition time of microalgae, and make enrichment and collection of the microalgae easy; in addition, the microalgae collecting device is simple in structure, and suitable for large-scale application.

The invention relates to the application of C/C and C/ceramic composite brake plate in motor vehicles, its preparing method: making the prefabricated piece, placing chemical liquid depositing device for chemical liquid deposition, graphitizing to form primary products; for size, processing into semifinished brake plate; coating the surface; sintering; finely processing to form finished composite brake plates. The device includes furnace body, vacuum system, condenser, water circulating system, liquid feeding system at the bottom of the furnace, the heated product placed on the base of the furnace body and a heating body in the center, where there are the inductor and the electric system connected of the doctor and variable-frequency power supply, both set on the periphery of the heated produce. It shortens the depositing time by several ten times or 101 times above, heightens the productivity, saves raw material and reduces product cost.

The invention belongs to the field of semiconductor memory manufacturing and particularly relates to a three-dimensional semiconductor memory based on vertical channels of two-dimensional semiconductor materials and a preparation method thereof. The three-dimensional semiconductor memory comprises a plurality of three-dimensional storage strings in a vertical direction, and each three-dimensionalmemory string includes a semiconductor vertical channel whose length is determined by the number of layers of memory three-dimensional stack. The vertical channel materials comprise one or more two-dimensional semiconductor materials and protection layers on the surfaces of the two-dimensional semiconductor materials. The protection layers are used for supporting and protecting the two-dimensionalsemiconductor materials, and the carrier mobility of the two-dimensional semiconductor materials is higher than that of amorphous silicon. According to the invention, the two-dimensional materials are used as memory channels, higher memory cell on-state current can be provided, and therefore, the operational power consumption of the memory is reduced.

The invention discloses a plasma jet deposition film device and a method of shallowing a surface trap level. The device comprises a plasma jet array, a bubbling bottle, a second air cylinder and a power supply. The plasma jet array is arranged in a tempered glass cavity and comprises a quartz tube, a hollow metal capillary tube, a copper foil and a three-dimensional mobile platform, wherein the hollow metal capillary tube is interspersed into the quartz tube, and the outer wall of the hollow metal capillary tube is not in contact with the inner wall of the quartz tube; the copper foil is arranged in the bottom of the quartz tube for grounding; the three-dimensional mobile platform is arranged right below the quartz tube to regulate movement of a sample; one end of the bubbling bottle is connected to a first air cylinder while the other end is connected to the upper orifice of the hollow metal capillary tube; the second air cylinder is connected to the upper orifice of the hollow metalcapillary tube; and the power supply is connected to the hollow metal capillary tube.

The invention relates to a spray-coating device and a spray-coating method for restraining secondary electron yield of a solid dielectric material and belongs to the technical field of plasma. The spray-coating method comprises the following steps of: washing and drying a to-be-treated sample; building the spray-coating device for restraining the secondary electron yield of the solid dielectric material; carrying out an atmospheric plasma torch spray-coating experience; and carrying out a secondary electron yield test and material surface physical shape observation. According to the spray-coating device and the spray-coating method provided by the invention, by utilizing plasma torches generated by an atmospheric plasma spray gun, a reaction precursor reacts to generate a Ti-containing group and an N-containing group; a compact and uniform TiN film is deposited on the surface of a dielectric; specifically, a gas-carrying precursor has decomposition and polymerization reaction; polymerization, grafting and crosslinking effects are realized on the surface of the dielectric so that the deposited film forms a 'micro-trap' structure, the surface roughness is reduced, the secondary electron yield of the solid dielectric is restrained, and the surface insulation property of the dielectric is improved.

A method of forming a smooth thin film on a substrate within a short deposition time, the method comprising introducing ionic substances (salts, acids, bases) to a polymeric solution to be sprayed. These ions attach to the polymer strands in solution, increasing their charge to mass ratio. This results in mutual repulsion of the strands during the spray process and produces a smooth film, even at relatively high polymeric solution concentrations. A side effect of this process is the introduction of impurities (the added ions) to the polymer thin film. The proper choice of ionic compound allows a dissolution step to be used to “clean” the polymer film after deposition, using the solubility characteristics of the thin film versus the ionic compound.

The preparation process of nanometer tin dioxide rod includes the following steps: mixing tin tetrachloride gas with hydrogen and air, introducing the mixture through the central tube of the three-channel jet in the top of the combusting reactor into the combusting reactor, feeding gas mixture of hydrogen and air through the middle ring tube of the three-channel jet into the combusting reactor, feeding air through the out ring tube of the three-channel jet into the combusting reactor, setting inert base board in the outlet of the burning jet, and depositing the produced nanometer tin dioxide rod on the inert base board. The said preparation process is one simple and effective process for preparing nanometer tin dioxide rod.

The present invention discloses a process for preparing graphene through RF-PECVD. The technical scheme comprises that: a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method is adopted and a polycrystal cobalt film prepared by adopting a magnetron sputtering film plating system is adopted as a substrate to successfully prepare high-quality graphene having 1-5 carbon atom layers at a low substrate temperature (800 DEG C) under less total gas flow rate (78 sccm) within a short deposition time (40 s). The process of the present invention has the following characteristics that: the graphene can be prepared under the conditions of the relatively low reaction temperature, the short deposition time and the less requirement of the carbon source through the RF-PECVD method so as to substantially reduce the graphene preparation cost and establish the foundation for the promotion of the industrial application of the graphene; and the graphene has excellent physical properties of high specific surface area, high optical transmittance, high electrical conductivity, high flexibility and the like, such that the graphene has wide application values in the fields of electronic devices, optical devices and the like.

The invention provides a preparation method of a transparent tin antimony oxide electric heating film, which belongs to the field of thin-film materials. The preparation method comprises the steps that tin and antimony raw materials and an additive are dissolved in a solvent to form a solution; a pH value of a system is adjusted to be neutral or slightly alkaline; the solution is put in an ultrasonic atomizer; a nozzle of the ultrasonic atomizer is positioned at the top of an electric box furnace; glass tubes or ceramic tubes to be coated are placed on a rack orderly and vertically; the rack on which the glass tubes or the ceramic tubes are placed is placed in the electric box furnace; a door of the electric box furnace is closed; the electric box furnace is switched on; the ultrasonic atomizer is switched on; and drops of the solution containing tin and antimony are deposited on the external surfaces of the glass tubes or the ceramic tubes uniformly to form transparent tin antimony oxide conductive films. The glass tubes or the ceramic tubes coated with the transparent tin-antimony oxide conductive films can be used as heating elements for heating liquid, gas, solid and the like.

The invention relates to a double antireflection layer structure of a solar cell reflection film and a preparation method thereof. The double antireflection layer structure is formed by an upper antireflection layer, a crater antireflection layer and a base layer in sequence. The crater antireflection layer in the middle is provided with arc-slope concave craters. The upper antireflection layer is composited on the upper surface of the crater antireflection layer and is formed by a bottom layer film and particles densely arranged thereon, wherein the surface of each particle has a suede shape. The bottom layer film and the upper surface of the crater antireflection layer are integrated and jointly form the concave craters. The crater layer is prepared through deposition by adopting the PECVD technology; the PECVD technology can be used to prepare the uniform and performance-stable crater layer structure; the controllability is high; and the thickness of the antireflection layer can be controlled accurately. A solar cell has more than 90 % high transmissivity. The antireflection layer is simple in specific processes, quick in deposition time and low in energy consumption; the double antireflection layers has sequentially-increasing refractive rate; and the structure can provide possibility for large-area industrial production.

The invention discloses a Zr-Cu-based amorphous alloy compound electrode material and a preparation method thereof. The material comprises an amorphous core at the middle, nano-porous copper layers ontwo sides of the core and nickel hydroxide particles on the copper layers. The amorphous core is made from copper-zirconium alloy; the widths of the tough belts and hole diameters of the nano-porouscopper layers are 50-100nm, and the thicknesses of the nano-porous copper layers are about 2-3 microns; the sizes of the deposited nickel hydroxide particles are about 200-400nm, and the loading capacities of the same are 0.3-1.0mg/cm<2>. The copper-zirconium alloy comprises 30-70% of Zr and 70-30% of Cu. According to the Zr-Cu-based amorphous alloy compound electrode material and preparation method thereof provided by the invention, the electrochemical deposition condition can be adjusted through adjusting the voltage, time, electrolyte concentration and the like of electrochemical deposition, the deposition time is relatively short, heating is not needed, and the process is visible; and the prepared compound material can be directly applied to the electrode material of the supercapacitor.

The invention relates to a method for treating a dredger fill foundation through flocculation combined with vacuum preloading. The method includes the processes of flocculation and vacuum preloading. Property of dredger fill is changed by early-stage flocculant, so that dewatering efficiency of late-stage vacuum preloading is improved. In addition, integral strength of the dredger fill foundation can be improved effectively by combining the flocculant with the dredger fill, so that integral reinforcing effect of the dredger fill foundation can be improved effectively through flocculation combined with vacuum preloading.

The invention belongs to the technical field of surface engineering and surface treatment, in particular providing a preparation method of a nano-crystalline zinc plating layer by using direct current electrodeposition. The preparation method is characterized by taking acidic zinc sulfate solution as a base plating solution, adopting three organics of cetyl trimethyl ammonium bromide (CTAB), benzylidene acetone (BA) and polyethylene glycol (PEG) as mixed additives for remarkably increasing the cathodic polarization of zinc deposition; and applying direct current for deposition by taking carbon plated steel as a cathode and insoluble electrode as an anode with the application of the direct current electrodeposition method, wherein current density is 0.5-4 A/cm2, and electroplating time is 1-6 minutes. By adopting the invention, the zinc plating layer with a luminant and smooth surface and the size of a crystalline grain less than 50 nm.