Reactor used for producing polycrystalline silicon

A reactor and polysilicon technology, applied in the fields of silicon compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of inability to divide the silicon core, uneven growth of silicon rods, low utilization rate of heat energy in the reactor, etc. The effect of uniform growth of rods, optimized surface morphology, and reduction of ineffective space

Active Publication Date: 2016-01-27
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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Problems solved by technology

[0011] The technical problem to be solved by the present invention is to provide a reduction furnace suitable for the production of polysilicon to solve the problems that the silicon core cannot be controlled in circles, the growth of silicon rods is not uniform, and the utilization rate of heat energy in the reactor is low.

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  • Reactor used for producing polycrystalline silicon
  • Reactor used for producing polycrystalline silicon
  • Reactor used for producing polycrystalline silicon

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Embodiment Construction

[0037] The reactor of the present invention will be described in detail below through specific examples with reference to the accompanying drawings, but these examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0038] figure 1 It is a vertical cross-sectional schematic diagram of a reactor for producing polysilicon in the present invention. Such as figure 1 As shown, the reactor 1 mainly includes a bell-type furnace tube 11 , a chassis 12 , a silicon core seat (electrode) 13 , a silicon core 14 , a beam silicon rod 17 , a raw material inlet 15 and an exhaust gas outlet 16 . The bell-type furnace drum 11 is fixed on the chassis 12 by fixing members (such as bolts), and forms a seal with each other. The silicon core seat (electrode) 13 , silicon core 14 , beam silicon rod 17 , raw material inlet 15 , and exhaust gas outlet 16 are located in the enclosed space surrounded by the cylinder 11 and the chassis 12 . The s...

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Abstract

The invention discloses a reactor used for producing polycrystalline silicon. The reactor comprises a furnace tube with a cooling device, a chassis, and electrodes, raw material gas inlets and gas outlets positioned on the chassis. The reactor is characterized in that except the outermost electrodes close to the furnace tube, each electrode has 4 or 5 other adjacent electrodes and one or two adjacent gas inlets and / or outlets at distances of 150mm-300mm. A matrix formed by the electrodes, gas inlets and gas outlets is arranged as equilateral triangle and / or approximate equilateral triangle matrix. With the reactor, denser silicon core arrangement can be realized, thermal energy utilization rate in a reduction furnace can be improved, and more uniform flow field distribution is realized, such that polycrystalline silicon yield in each bath is improved, product surface quality is improved, and energy consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a reduction furnace for improving the Siemens process to produce polysilicon. Background technique [0002] At present, the improved Siemens process is the most widely used polysilicon production method. The principle of the Siemens process is to use a high-temperature reduction deposition process. A silicon core with a thickness of about 8mm connected to the electrode is used as a deposition substrate, and high-purity SiHCl 3 as material, in high-purity H 2 High temperature reduction deposition in the atmosphere to generate polysilicon. [0003] The so-called bell jar reactor is a sealed structure, the chassis electrode is connected with a silicon core with a diameter of 5-10mm and a length of 1500-3000mm, and the silicon core seat on the electrode is clamped (also known as "graphite card flap" component) Fixed, the upper ends of the two silicon rods on each pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
Inventor 江宏富钟真武陈文龙王小军吴锋陈其国
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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