Prepn process of nanometer tin dioxide rod

A technology of tin dioxide and nanorods, applied in tin oxide, nanostructure manufacturing, nanotechnology, etc., can solve problems such as complex process and long production cycle

Inactive Publication Date: 2007-01-03
EAST CHINA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the synthesis methods of tin dioxide nanorods include redox method, microemulsion method, template method, etc., but there are problems such as complicated process and long production cycle.

Method used

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  • Prepn process of nanometer tin dioxide rod
  • Prepn process of nanometer tin dioxide rod
  • Prepn process of nanometer tin dioxide rod

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Evaporate tin tetrachloride (3ml / min) at 250°C, hydrogen (1.0m 3 / h) and air preheated to 100°C (3m 3 / h) is passed into the central pipe 301 of the multi-jet combustion reactor after mixing, and the air (1m 3 / h) and hydrogen (1m 3 / h) of the mixed gas, the three-loop pipe is fed with air at a temperature of 25°C (2m 3 / h), carry out the gas phase combustion hydrolysis reaction in the combustion reaction chamber, the flame temperature in the combustion chamber is 800 ° C, the substrate is 3 cm away from the burner outlet, the deposition time is 10 min, and the tail gas is absorbed by the absorption device. The tin dioxide nanorods produced by the reaction have a diameter of 20 nm and an aspect ratio of 9. SEM photo see figure 2 .

Embodiment 2

[0027] Evaporate tin tetrachloride (5ml / min) at 300°C and mix with hydrogen (2.0m 3 / h) and air preheated to 50°C (4m 3 / h) is passed into the center pipe 301 of the multi-jet combustion reactor after mixing, and at the second ring pipe 302, the air (2m 3 / h) and hydrogen (3m 3 / h) mixed gas, the three-ring pipe 303 is fed with air at a temperature of 30°C (10m 3 / h), carry out the gas phase combustion hydrolysis reaction in the combustion reaction chamber, the flame temperature in the combustion chamber is 1500°C, the substrate is 20cm away from the burner outlet, the deposition time is 60min, and the tail gas is absorbed by the absorption device. The tin dioxide nanorods produced by the reaction have a diameter of 50 nm and an aspect ratio of 5. SEM photo see image 3 .

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Abstract

The preparation process of nanometer tin dioxide rod includes the following steps: mixing tin tetrachloride gas with hydrogen and air, introducing the mixture through the central tube of the three-channel jet in the top of the combusting reactor into the combusting reactor, feeding gas mixture of hydrogen and air through the middle ring tube of the three-channel jet into the combusting reactor, feeding air through the out ring tube of the three-channel jet into the combusting reactor, setting inert base board in the outlet of the burning jet, and depositing the produced nanometer tin dioxide rod on the inert base board. The said preparation process is one simple and effective process for preparing nanometer tin dioxide rod.

Description

technical field [0001] The invention relates to a preparation method of tin dioxide nanorods. Background technique [0002] The study of one-dimensional or quasi-one-dimensional nanostructure systems or nanomaterials is one of the most important research frontiers in materials science at home and abroad in recent years. This type of material is not only of great significance for understanding the influence of the dimension and particle size of the material on the physical and chemical properties of the material, but also this type of material is not only the basis for the study of other low-dimensional materials, but also closely related to nanoelectronic devices and micro sensors. , has broad application prospects in the fields of chemistry, physics, electronics, optics and biomedicine. One-dimensional nanomaterials include nanotubes, nanorods, metal and semiconductor nanowires, coaxial nanocables, nanoribbons, etc. [0003] Tin dioxide is a classic semiconductor material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02B82B3/00
Inventor 李春忠胡彦杰顾锋姜海波
Owner EAST CHINA UNIV OF SCI & TECH
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