Process for preparing graphene through RF-PECVD
A graphene and process technology, applied in the field of graphene preparation by RF-PECVD, can solve the problems of multiple carbon sources, limited application, high reaction temperature, etc., and achieve the effects of high specific surface area, reduced preparation cost, and high optical transmittance
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[0008] A process for preparing graphene by RF-PECVD, which is characterized in that it adopts the method of radio frequency plasma enhanced chemical vapor deposition (RF-PECVD), and uses the polycrystalline cobalt film prepared by the magnetron sputtering coating system as the substrate, at a lower High-quality graphene with 1-5 carbon atomic layers was successfully prepared at substrate temperature (800 °C), less total gas flow rate (78 sccm) and shorter deposition time (40 s).
[0009] Preparation of polycrystalline cobalt film: JGP-450A multi-target magnetron sputtering coating equipment is used to deposit a cobalt film with a thickness of 450nm on a single crystal Si (100) substrate, and the sputtering target used is a 6cm diameter High purity cobalt (99.95%). Before putting the Si (100) substrate into the vacuum chamber, it was ultrasonically cleaned with acetone, alcohol and deionized water for 15 min to remove the stains on the surface of the silicon wafer. When the bac...
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