Process for preparing graphene through RF-PECVD

A graphene and process technology, applied in the field of graphene preparation by RF-PECVD, can solve the problems of multiple carbon sources, limited application, high reaction temperature, etc., and achieve the effects of high specific surface area, reduced preparation cost, and high optical transmittance

Inactive Publication Date: 2015-06-17
QINGDAO SHENGLI BOILER
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, although the research on graphene has made great progress in theory and experiment, however, there are still many problems to be further explored and studied, both in the preparation of graphene and in the application of graphene. For example: how to reduce the cost of graphene preparation, what is the growth mechanism of graphene, how to modulate the structure of graphene, whether the performance of graphene-based composite materials can be further developed or improved, etc.
Among the many methods for preparing graphene, the chemical vapor deposition (CVD) method is one of the most effective methods for preparing large-area, high-quality graphene. However, this method requires extremely high reaction temperature and more carbon sources. , limiting its application in industrial

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] A process for preparing graphene by RF-PECVD, which is characterized in that it adopts the method of radio frequency plasma enhanced chemical vapor deposition (RF-PECVD), and uses the polycrystalline cobalt film prepared by the magnetron sputtering coating system as the substrate, at a lower High-quality graphene with 1-5 carbon atomic layers was successfully prepared at substrate temperature (800 °C), less total gas flow rate (78 sccm) and shorter deposition time (40 s).

[0009] Preparation of polycrystalline cobalt film: JGP-450A multi-target magnetron sputtering coating equipment is used to deposit a cobalt film with a thickness of 450nm on a single crystal Si (100) substrate, and the sputtering target used is a 6cm diameter High purity cobalt (99.95%). Before putting the Si (100) substrate into the vacuum chamber, it was ultrasonically cleaned with acetone, alcohol and deionized water for 15 min to remove the stains on the surface of the silicon wafer. When the bac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The present invention discloses a process for preparing graphene through RF-PECVD. The technical scheme comprises that: a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method is adopted and a polycrystal cobalt film prepared by adopting a magnetron sputtering film plating system is adopted as a substrate to successfully prepare high-quality graphene having 1-5 carbon atom layers at a low substrate temperature (800 DEG C) under less total gas flow rate (78 sccm) within a short deposition time (40 s). The process of the present invention has the following characteristics that: the graphene can be prepared under the conditions of the relatively low reaction temperature, the short deposition time and the less requirement of the carbon source through the RF-PECVD method so as to substantially reduce the graphene preparation cost and establish the foundation for the promotion of the industrial application of the graphene; and the graphene has excellent physical properties of high specific surface area, high optical transmittance, high electrical conductivity, high flexibility and the like, such that the graphene has wide application values in the fields of electronic devices, optical devices and the like.

Description

technical field [0001] The invention discloses a process for preparing graphene by RF-PECVD. Background technique [0002] Carbon nanomaterials, from amorphous amorphous carbon to crystalline natural graphite, from zero-dimensional fullerene (C 60 ) to one-dimensional carbon nanotubes (CNTs), have been favored by the majority of scientific researchers. These carbon materials have brought endless scientific new ideas to scientific researchers. The emergence of two-dimensional graphene (Graphene) not only enriches the family of carbon materials, but also because of its special structure and excellent properties, its light gradually surpasses other members of the carbon family and becomes a more researched material. Significance and application value of carbon material graphene is composed of single layer sp 2 A two-dimensional honeycomb lattice structure material composed of hybrid carbon atoms, which can exhibit extremely high electron mobility, excellent thermodynamic stab...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 于明森
Owner QINGDAO SHENGLI BOILER
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products