Reaction kettle, and device and method for growing gallium nitride crystal
A reaction kettle and gallium nitride technology, which is applied in the field of growing gallium nitride crystal devices and reaction kettles, can solve the problem that the inner diameter of the kettle is difficult to enlarge
Inactive Publication Date: 2020-12-08
SHANGHAI XITANG SEMICON TECH CO LTD
View PDF4 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] Based on this, it is necessary to provide an improved reactor to solve the problem that the internal diameter of the traditional reactor is difficult to increase, so that the material can reach a larger growth size
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.
[0036] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical", "horizontal", "left", "right", "upper", "lower", "front", "rear", "circumferential" and...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| diameter | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a reaction kettle, a device for growing gallium nitride crystals and a growth method. The reaction kettle provides a high-temperature and ultrahigh-pressure environment for growth of materials in supercritical fluid and comprises a kettle body, wherein the kettle body comprises a first barrel and a second barrel arranged on the outer wall of the first barrel in a sleevingmode, the first barrel is provided with a containing cavity for containing to-be-grown materials, and the second barrel is used for enabling the first barrel to generate compression pre-stress; a sealing piece, which is arranged at the open end of the kettle body and used for sealing the kettle body; and a heating part, which is arranged on the outer wall of the second barrel and is used for heating the kettle body. The inner diameter of the reaction kettle can range from 25mm to 300mm, the size and the yield of the gallium nitride crystal can be remarkably improved by utilizing the reaction kettle to grow the gallium nitride crystal, meanwhile, the production cost can be reduced, and the industrial production of the gallium nitride crystal is facilitated.
Description
technical field [0001] The invention relates to the technical field of crystal growth, in particular to a reaction kettle, a device and a method for growing gallium nitride crystal. Background technique [0002] Gallium nitride (GaN) and its related group III alloys are key materials for various optoelectronic devices, such as light-emitting diodes, laser diodes (LD) and microwave power transistors, etc., and have great potential for future market applications. [0003] GaN single crystal growth methods include hydride vapor phase epitaxy, high-pressure nitrogen solution method, ammonothermal method, sodium flux method, etc., but the single crystal growth technology is not yet mature and has not yet been widely used. Among the above methods, the ammonothermal method is easy to obtain larger-sized single crystals, and has the potential to mass-produce gallium nitride single crystals. The ammonothermal method belongs to the solvothermal method, and refers to a solvothermal cr...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B7/10
CPCC30B7/105C30B29/406
Inventor 高明哲
Owner SHANGHAI XITANG SEMICON TECH CO LTD