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A kind of preparation method of knn-based ultra-high breakdown electric field single crystal thin film material

A single crystal thin film and electric field technology, applied in the field of chemical engineering, can solve problems such as low breakdown electric field, low energy storage density, and failure to meet actual production needs

Active Publication Date: 2022-04-19
苏州卡巴卡电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dielectric constant and breakdown electric field of traditional linear dielectric materials are low, so the energy storage density value is low, which cannot meet the actual production needs, so it is necessary to find a material with ultra-high electric field breakdown strength
At present, lead-based ferroelectric materials are one of the ferroelectric materials with the best ferroelectric properties and the most widely used, but they will pollute the environment during production and disposal.

Method used

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  • A kind of preparation method of knn-based ultra-high breakdown electric field single crystal thin film material
  • A kind of preparation method of knn-based ultra-high breakdown electric field single crystal thin film material

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Experimental program
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Effect test

Embodiment 1

[0019] (1) Weigh CH respectively according to the molar ratio 0.3:0.6:0.4:0.1:0.1:0.1:0.2:0.2 3 COOK, C 10 h 25 NbO 5 、CH 3 COONa·xH 2 O, C 6 h 9 o 6 Sb, C 2 h 3 o 2 Li·xH 2 O, C 10 h 25 o 5 Ta, C 4 h 6 BaO 4 and Zr(OC 3 h 7 ) 4 Prepare KNNS-LT-BZ precursor solution;

[0020] CH 3 COOK, C 10 h 25 NbO 5 、CH 3 COONa·xH 2 O, C 6 h 9 o 6 Sb, C 2 h 3 o 2 Li·xH 2 O, C 10 h 25 o 5 Ta, and C 4 h 6 BaO 4 Dissolve in a mixed liquid of glacial acetic acid and deionized water at 120°C, and then Zr(OC 3 h 7 ) 4 Dissolve in glacial acetic acid and CH at room temperature 3 COCH 2 COCH 3 In the mixed liquid, finally the previous two mixed liquids were mixed again at 100°C and stirred for 30 minutes, and left for 20 hours to obtain a concentration of 0.2M. The general formula is (Na x K (z-x) )(Nb y Sb (z-y) )O 3 -(1-z-c)LiTaO 3 -cBaZrO 3 The KNNS-LT-BZ precursor solution, wherein x=0.4, y=0.6, z=0.7, c=0.2;

[0021] (2) The KNNS-LT-BZ precur...

Embodiment 2

[0025] (1) Weigh CH according to the molar ratio 0.4:0.65:0.3:0.05:0.1:0.1:0.2:0.2 3 COOK, C 10 h 25 NbO 5 、CH 3 COONa·xH 2 O, C 6 h 9 o 6 Sb, C 2 h 3 o 2 Li·xH 2 O, C 10 h 25 o 5 Ta, C 4 h 6 BaO 4 and Zr(OC 3 h 7 ) 4 Prepare KNNS-LT-BZ precursor solution;

[0026] CH 3 COOK, C 10 h 25 NbO 5 、CH 3 COONa·xH 2 O, C 6h 9 o 6 Sb, C 2 h 3 o 2 Li·xH 2 O and C 10 h 25 o 5 Ta was dissolved in a mixture of glacial acetic acid and deionized water at 120°C, and then C 4 h 6 BaO 4 and Zr(OC 3 h 7 ) 4 Dissolve in glacial acetic acid and CH at room temperature 3 COCH 2 COCH 3 In the mixed liquid, finally the previous two mixed liquids were mixed again at 120°C and stirred for 30 minutes, and left for 25 hours to obtain a general formula with a concentration of 0.25M (Na x K (z-x) )(Nb y Sb (z-y) )O 3 -(1-z-c)LiTaO 3 -cBaZrO 3 The KNNS-LT-BZ precursor solution, wherein x=0.3, y=0.65, z=0.7, c=0.2;

[0027] (2) The KNNS-LT-BZ precursor solut...

Embodiment 3

[0031] (1) Weigh CH respectively according to the molar ratio 0.3:0.5:0.3:0.1:0.1:0.1:0.3:0.3 3 COOK, C 10 h 25 NbO 5 、CH 3 COONa·xH 2 O, C 6 h 9 o 6 Sb, C 2 h 3 o 2 Li·xH 2 O, C 10 h 25 o 5 Ta, C 4 h 6 BaO 4 and Zr(OC 3 h 7 ) 4 Prepare KNNS-LT-BZ precursor solution;

[0032] CH 3 COOK, C 10 h 25 NbO 5 、CH 3 COONa·xH 2 O, C 6 h 9 o 6 Sb, C 2 h 3 o 2 Li·xH 2 O, C 10 h 25 o 5 Ta, and C 4 h 6 BaO 4 Dissolve in a mixed liquid of glacial acetic acid and deionized water at 120°C, and then Zr(OC 3 h 7 ) 4 Dissolve in glacial acetic acid and CH at room temperature 3 COCH 2 COCH 3 In the mixed liquid, finally the previous two mixed liquids were mixed again at 150°C and stirred for 30min, and left for 30h to obtain a concentration of 0.3M with the general formula (Na x K (z-x) )(Nb y Sb (z-y) )O 3 -(1-z-c)LiTaO 3 -cBaZrO 3 The KNNS-LT-BZ precursor solution, wherein x=0.3, y=0.5, z=0.6, c=0.3;

[0033] (2) The KNNS-LT-BZ precursor solut...

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Abstract

The invention relates to a preparation method of a KNN-based ultrahigh breakdown electric field single crystal thin film material, belonging to the technical field of chemical engineering. A preparation method of a KNN-based ultra-high breakdown electric field single crystal thin film material, comprising the following steps: preparing a KNNS-LT-BZ precursor solution; the gained KNNS-LT-BZ precursor solution is spin-coated on Nb-doped SrTiO of different orientations 3 On the substrate, a wet film is obtained; drying, pyrolysis, and annealing make a layer of KNNS-LT-BZ film; repeat the above to make a multi-layer KNNS-LT-BZ film. The preparation method of the present invention is relatively simple, and can control the structure and performance of the thin film through the principle of high entropy, different crystallization methods and different annealing time lengths, and is a convenient and quick preparation technology.

Description

technical field [0001] The invention relates to a preparation method of a KNN-based ultrahigh breakdown electric field single crystal thin film material, belonging to the technical field of chemical engineering. Background technique [0002] With the development of electronic information technology, the requirements for materials are getting higher and higher. The dielectric constant and breakdown electric field of traditional linear dielectric materials are low, so the energy storage density value is low, which cannot meet the actual production needs, so it is necessary to find a material with ultra-high electric field breakdown strength. At present, lead-based ferroelectric materials are one of the ferroelectric materials with the best ferroelectric properties and the most widely used, but they will pollute the environment during production and disposal. Therefore, the development of lead-free ferroelectric materials with ultra-high electric field breakdown strength and e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/622
CPCC04B35/495C04B35/62218C04B2235/3201C04B2235/3294C04B2235/3203C04B2235/3251C04B2235/3215C04B2235/3244C04B2235/602C04B2235/606C04B2235/656C04B2235/6567C04B2235/663
Inventor 彭彪林李盈盈
Owner 苏州卡巴卡电子科技有限公司