Method for determining wafer processing parameters and wafer processing method

Abstract

The invention provides a method for determining wafer processing parameters and a wafer processing method. The method for determining the wafer processing parameters comprises the following steps: acquiring flatness data of predetermined lines on a plurality of wafers in a wafer processing procedure; determining radial data of the predetermined lines according to the flatness data of the predetermined lines; and determining the silicon wafer processing parameters according to the radial data of the predetermined lines of the plurality of wafers. According to the method, the parameters of the next batch of silicon rods or the subsequent processing procedure of wafers can be determined according to the processing data of the previous batch of silicon rods, so the flatness precision of obtained wafers is higher, processing yield is higher, and cost can be reduced.

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a method for determining wafer processing parameters and a wafer processing method. Background technique

[0002] As a flatness parameter representing the convex and concave components of the wafer from 0.2 to tens of mm, the nano-topography has an extremely important impact on subsequent chips. Nano-topography is mainly produced in the slicing and thinning stages of silicon wafers, but because the numerical values ​​involved in nano-topography are small, in the cutting and thinning stages, because the surface of silicon wafers is relatively rough, capacitive or double-sided The laser measurement method only measures several straight-line scanning data, and the measurement position is mainly based on the notch as a reference, such as figure 2 as shown, figure 2 Measure the notch line passing through the notch point and the center of the circle, and then rotate 45 degrees...

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