A low-voltage high-current mosfet power chip

Abstract

The invention relates to the field of electronic components, in particular to a low-voltage high-current Mosfet power chip, which includes a substrate and lead wires, and a first wafer group for basic operations and auxiliary temperature control operations is embedded in the substrate. , the second wafer group for assisting resource allocation calculation, the first wafer group / the second wafer group are respectively arranged on both sides of the substrate, the first heat dissipation layer is arranged on the outside of the first wafer group, the first wafer group and the second wafer group The first protective layer is arranged between the first heat dissipation layers, the second heat dissipation layer is arranged on the outside of the second wafer group, the second protective layer is arranged between the second wafer group and the second heat dissipation layer, and the leads of the first wafer group The foot wires pass through the second wafer group and are connected at the corresponding pin positions of the second wafer group. The outer periphery of the first wafer group is provided with a first heat conduction channel, and the outer periphery of the second wafer group is provided with a second heat conduction channel. aisle. The invention particularly pays attention to and solves the heat dissipation problem of the low-voltage high-current Mosfet power chip.

Description

technical field [0001] The invention belongs to the field of electronic components, in particular to a low-voltage and high-current Mosfet power chip. Background technique [0002] A chip generally refers to a silicon wafer containing an integrated circuit and is small in size. It also refers to all semiconductor components, and is a circuit module that integrates a variety of electronic components on a silicon board to achieve a specific function. The chip is already the most important part of the electronic device, and it undertakes the functions of computing and storage. For a long time, the heat dissipation of the chip has always been a problem. At present, there is little research on low-voltage and high-current Mosfet power chips. For example, the prior art Chinese utility model patent CN201821369046.0 discloses a low-voltage and high-current Mosfet power module in the related art, which includes a drive protection circuit board, a ceramic board , Mosfet chip, upper ...

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Problems solved by technology

At present, there are few studies on low-voltage and high-current Mosfet power chips. For example, the Chinese utility model patent CN201821369046.0 of the prior art discloses a low-voltage and high-current Mosfet power module in the related art, which includes a drive protection circuit board and a ceramic board. , Mosfet chip, upper cover body, heat dissipation substrate body; several Mosfet chips are connected in parallel to form a Mosfet chip array; the drive protection circuit board and ceramic plate are fixed on the heat dissipation substrate body, and the Mosfet chip array is fixed on the ceramic plate, and The drain of each Mosfet chip in the Mosfet chip is welded to the ceramic plate, and the gate and source of each Mosfet chip are connected to the drive protection circuit board; the interior of the heat dissipation substrate body is provided with several horizontal through holes for heat dissipation. The interior of the substrate body is provided with several through-holes 2 in the front and rear directions, and the first radiating hole communicates with the second radiating hole, and the joint between the first radiating hole and the second radiating hole is provided with a third radiating hole perpendicular to the first radiating hole, and the heat dissipation The upper end of the hole three is connected with the heat dissipation substrate body, the upper end of the heat dissipation substrate body is fixedly installed with an upper cover body, and the middle part of the upper cover body is provided with a heat dissipation plate body

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