Circulating water temperature control device for growing single crystal by VGF method and application

Abstract

The invention relates to a circulating water temperature control device for growing single crystal by a VGF method and application, which belong to the technical field of semiconductor materials and comprise a single crystal furnace and a circulating water system, the circulating water system comprises a circulating water tank, a main pipeline and a branch pipeline; circulating water sequentiallyflows through the main pipeline and the branch pipeline and reaches the single crystal furnace, and then flows through thesingle crystal furnace and returns to the circulating water tank successivelyvia the branch pipeline and the main pipeline. The single crystal furnace water inlet pipeline is provided with a circulating water flow regulating valve and a temperature control device, the single crystal furnace water outlet pipeline is provided with a temperature measuring device, and the temperature field of the next round can be subjected to micro-amplitude correction according to the crystal growth result of the upper round. The device has the effects of reducing the production cost, improving the single crystal rate, making up for the thermal field defects and the like.

Description

technical field [0001] The invention relates to a circulating water temperature control device for single crystal growth by VGF method and its application, belonging to the technical field of semiconductor materials. Background technique [0002] With the wide application of semiconductor materials in the fields of electronic power, microwave radio frequency, and optoelectronics, crystal growth technology has become the key to the preparation of semiconductor materials. Among them, the LEC method and VGF method have become the main methods for growing single crystals. Among them, the LEC method can observe crystals in real time. growth process, but its axial temperature gradient is large, and the dislocation density of the grown single crystal is high; while the VGF method cannot observe the crystal growth process in real time, its axial temperature gradient is relatively small, and the dislocation density of the grown crystal is relatively small. However, in the actual prod...

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Problems solved by technology

[0002] With the wide application of semiconductor materials in the fields of electronic power, microwave radio frequency, and optoelectronics, crystal growth technology has become the key to the preparation of semiconductor materials. Among them, the LEC method and VGF method have become the main methods for growing single crystals. Among them, the LEC method can observe crystals in real time. growth process, but its axial temperature gradient is large, and the dislocation density of the grown single crystal is high; while the VGF method cannot observe the crystal growth process in real time, its axial temperature gradient is relatively small, and the dislocation density of the grown crystal is relatively small. However, in the actual production process, it may be that the temperature of the circulating water temperature is too low, which leads to a large longitudinal temperature gradient of crystal growth, which leads to the dense interior of the crystal, or the temperature of the circulating water temperature is too high, resulting in a low longitudinal temperature of crystal growth, which leads to easy crystal growth. The phenomenon of flower crystal or luan crystal appears, so it is of great significance to reasonably control the temperature of the inlet and outlet water of circulating water to improve the quality of single crystal

[0003] At present, there are many factors affecting single crystal growth by VGF method, such as: the compactness of insulation cotton in different furnaces, the thickness of quartz sand filled in the furnace, the temperature setting of temperature control TC, and the quality of seed crystals. and circulating water will have a great impact on the quality of the single crystal. However, there are slight differences in the compactness of the insulation cotton filled in each furnace, as well as the amount and uniformity of the quartz sand filled in each furnace. Artificially difficult to control into a unified standard

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