Semiconductor device

Abstract

A semiconductor device is disclosed. The semiconductor device includes a substrate, a metal-oxide-semiconductor device, and a feature. The metal-oxide-semiconductor device is disposed in the substrate. The feature is disposed adjacent to the metal-oxide-semiconductor device. The feature extends into the substrate with a first depth and the metal-oxide-semiconductor device extends into the substrate with a second depth smaller than the first depth.

Description

technical field [0001] The present application relates to the field of semiconductors, and in particular, to a semiconductor device. Background technique [0002] In radio transmission devices such as mobile phones and wireless systems, their antenna switches are important components for routing high-frequency signals through transmission paths. The antenna switch is usually combined with a power amplifier, and both functions are integrated in the same integrated circuit. In some approaches, the transmitted signal is connected from one node to another through the substrate. A substrate susceptible to substrate noise coupling can be described as having low insertion loss, where insertion loss is the reduction of the transmitted signal. Trace insertion loss becomes more challenging for semiconductor device design and fabrication in low-noise circuits for mixed-signal and system-on-chip (SOC) designs. Contents of the invention [0003] In some embodiments, the present appl...

AI Technical Summary

Problems solved by technology

In low-noise circuits for mixed-signal and system-on-chip (SOC) designs, trace insertion loss becomes more challenging for semiconductor device design and fabrication

Images