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Terahertz radio frequency signal detector based on metasurface optical antenna and preparation method

An optical antenna and radio frequency signal technology, applied in the field of signal detection, can solve the problems of large volume, slow response, narrow detection band, etc., achieve good detection performance, reduce cost, and increase the effect of contact area

Pending Publication Date: 2021-01-12
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a terahertz radio frequency signal detector and a preparation method based on a metasurface optical antenna, the purpose of which is to solve the existing terahertz radio frequency S / C / X band signal detection Technical problems such as large volume, slow response and narrow detection band exist in the sensor

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  • Terahertz radio frequency signal detector based on metasurface optical antenna and preparation method
  • Terahertz radio frequency signal detector based on metasurface optical antenna and preparation method
  • Terahertz radio frequency signal detector based on metasurface optical antenna and preparation method

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Embodiment 1

[0032] refer to figure 1 , a terahertz radio frequency signal detector based on a metasurface optical antenna, comprising: a substrate layer 1, a doped layer 2, a silicon dioxide layer 3, a metasurface optical antenna layer 4, an ohmic electrode 5, and a Schottky electrode 6 and common electrodes7. Wherein, the doped layer 2 is formed on the substrate layer 1, the silicon dioxide layer 3 is made on the doped layer 2, the metasurface optical antenna layer 4 is made on the doped layer 2, and the ohmic electrode 5 is made on the doped layer. On the layer 2, the Schottky electrode 6 is made on the silicon dioxide layer 3, the common electrode 7 is made on the silicon dioxide layer 3, and the ohmic electrode 5 and the Schottky electrode 6 are respectively located on the surface of the metasurface optical antenna layer 4. At the left and right ends, the common electrode 7 and the Schottky electrode 6 are respectively located at the left and right ends of the metasurface optical ant...

Embodiment 2

[0041] A method for preparing a terahertz radio frequency signal detector based on a metasurface optical antenna proposed in Embodiment 1, comprising the following steps:

[0042] S1. Si ions are implanted on the substrate 1 by metal-organic compound chemical vapor deposition method, and the doping concentration is 1×10 16 cm -3 ~9×10 18 cm -3 , thereby forming a doped layer 2 with a thickness of 1 μm to 2 μm; in this embodiment, the substrate layer 1 is semi-insulating gallium arsenide, and the doped layer 2 is N-type gallium arsenide as an example;

[0043] S2, preparing a silicon dioxide layer 3 on the doped layer 2 by a plasma-enhanced chemical vapor deposition method, the thickness of which is 100nm-300nm;

[0044] S3. Photoetching the ohmic electrode contact hole pattern on the silicon dioxide layer 3 through a positive resist process, and using a wet etching process to etch the silicon dioxide layer at the position of the ohmic electrode contact hole pattern, and the...

Embodiment 3

[0055] refer to Figure 10 , this embodiment provides another terahertz radio frequency signal detector based on a metasurface optical antenna, including: a substrate layer, a first doped layer, a first silicon dioxide layer, a first metasurface optical antenna layer, a first Ohmic electrode, first Schottky electrode, first common electrode, second doped layer, second silicon dioxide layer, second metasurface optical antenna layer, second ohmic electrode, second Schottky electrode, second Common electrodes; wherein the first doped layer is located on the substrate layer, the first silicon dioxide layer, the first metasurface optical antenna layer, and the first ohmic electrode are located on the first doped layer, The first Schottky electrode and the first common electrode are located on the first silicon dioxide layer; the first Schottky electrode and the first common electrode are all connected to the first metasurface optical antenna layer connected, the first metasurface ...

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Abstract

The invention discloses a terahertz radio frequency signal detector based on a metasurface optical antenna and a preparation method. The detector comprises a substrate, a doping layer, a silicon dioxide layer, a metasurface optical antenna layer, an ohmic electrode, a Schottky electrode and a common electrode. The width of the metasurface optical antenna layer is 2-100 mm, and the metasurface optical antenna layer comprises a first metal layer used for detecting radio frequency S wave band signals or C wave band signals or X wave band signals and a second metal layer used for detecting terahertz signals. Since the first metal layer and the second metal layer respectively have extremely strong local surface plasmon induction capability on radio frequency and terahertz signals, once local surface plasmon oscillation is generated with a corresponding signal, the response speed belongs to ultra-high-speed response, and an extremely strong response signal can be generated in an extremely short time, so that the detector can better distinguish an electromagnetic signal of a terahertz radio frequency band. In addition, due to the fact that the super-surface optical antenna is manufacturedthrough the nanometer technology, the terahertz radio frequency signal detector is very small in size and very light in weight.

Description

technical field [0001] The invention belongs to the technical field of signal detection, and more specifically relates to a terahertz radio frequency signal detector based on a metasurface optical antenna and a preparation method thereof. Background technique [0002] Terahertz radio frequency S / C / X band detection is widely used in many fields such as security inspection monitoring system, space communication, aerospace and radar. [0003] Common terahertz radio frequency S / C / X band detectors mainly include scanning subsystem, receiver subsystem and calibration subsystem. slow. Therefore, in the occasions requiring high-speed, high-sensitivity, and miniaturized signal detection, the performance of existing terahertz radio frequency S / C / X-band detectors is insufficient. This is mainly due to the following problems in the existing terahertz radio frequency S / C / X band detectors: 1. The spectral imaging device of the terahertz radio frequency S / C / X band detector still needs to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/115H01L31/0236H01L31/0216H01L31/18H01Q15/00H01Q15/10
CPCH01L31/02161H01L31/02366H01L31/115H01L31/18H01Q15/006H01Q15/0086H01Q15/10Y02P70/50
Inventor 罗俊胡钗魏东张新宇
Owner HUAZHONG UNIV OF SCI & TECH
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