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Laser repairing method of thin film

A laser repair and thin film technology, applied in the field of laser repair, can solve problems such as repair failure, abnormal circuit and structure, and damage to the underlying material, and achieve the effects of reducing underlying damage, reducing the formation of high heat-affected zones, and reducing accumulated energy

Active Publication Date: 2021-01-15
FUJIAN HUAJIACAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the laser repair equipment currently on the market, the repair techniques are all easy to cause damage to the underlying material
Analysis of the reasons for the failure of laser repair is mainly due to the absorption and vaporization of the laser energy by the thin film, but the thin film absorbs the laser energy and transfers the energy to the underlying material in the form of heat transfer, resulting in the formation of a high heat-affected zone (Heat-affected zone); After the affected area is formed, it will cause qualitative change or melting of the underlying material, resulting in abnormal wiring and structure, resulting in repair failure

Method used

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  • Laser repairing method of thin film
  • Laser repairing method of thin film
  • Laser repairing method of thin film

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Embodiment 1

[0044] Please refer to Figure 1 to Figure 4 , Embodiment 1 of the present invention is:

[0045] A thin film laser repair method, comprising the following steps:

[0046] S1. Provide a thin film, and obtain the absorbance of the film layers in the thin film to more than two laser sources with different wavelengths, to obtain a first set of absorbance;

[0047] S2. In the first absorption set, select an element whose absorption degree of the topmost layer in the film is greater than the absorption degree of the bottom layer, to obtain a second absorption degree set;

[0048] S3. In the second absorption set, select the element with the smallest absorbance in the bottom layer of the film to obtain a third absorbance set;

[0049] S4. Select a corresponding laser source according to the third absorbance set;

[0050] S5, placing the laser source selected in step S4 above the film to perform laser repairing on the film.

[0051] Step S5 is specifically:

[0052] placing the ...

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Abstract

The invention relates to the technical field of laser repairing, in particular to a laser repairing method for a thin film. According to the laser repairing method, a proper laser source is selected by acquiring an element of which the topmost absorptivity is greater than the bottommost absorptivity in the thin film and an element of which the bottommost absorptivity in the thin film is minimum inan absorptivity set, then the thin film is subjected to laser repairing treatment through the selected laser source, accumulated energy of laser on the film layer in unit time can be effectively reduced, formation of a high-heat affected zone of the bottom layer is reduced, and therefore bottom layer damage is reduced, and the repairing success probability is increased.

Description

technical field [0001] The invention relates to the technical field of laser repair, in particular to a thin film laser repair method. Background technique [0002] During the processing of thin-film transistors, dust problems can lead to graphic definition errors, or dust cover during graphic transfer in the post-processing process, resulting in abnormal final graphics and formation of defects, affecting transistor performance or signal series connection, leading to final product failure . The existing pattern repair method uses laser to locally heat and vaporize the wrong pattern to remove excess photoresist or film. There are three types of common laser light sources: IR, Green, and D-UV, each with different wavelength energy. There are three common laser pulse frequencies: Nona (E-9), Pico (E-12), and Fento (E-15). [0003] With the laser repair equipment currently on the market, the repair techniques are all easy to cause damage to the underlying material. Analysis ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/70
CPCB23K26/707Y02P70/50
Inventor 王聪智许正隆
Owner FUJIAN HUAJIACAI CO LTD