An optimized MRAM system with ECC function and method of operating same

Abstract

According to the optimized MRAM system with the ECC function and a method of operating the same, frequent reading of the whole internal word is avoided under the condition that ECC is used; the optimized MRAM system comprises a register, an error correction circuit and a control circuit; the control circuit comprises a read-write operation module, a data write-back MRAM operation module and an address management module; and when a short word is accessed from the outside, the corresponding long words are integrally read into the register, and read-write operation of the short words is carried out on the register area; and if the external word address in the later period can also be matched with the internal long word address, read-write operation can be continuously carried out on the register area until the external word address in the new period cannot be matched, then the register is written back to the MRAM, and the data of the corresponding internal word address is read into the register, so that the power consumption required for reading and writing the MRAM is effectively reduced, and in addition, a complete reading and writing operation can be realized in the same period.

Description

technical field [0001] The application belongs to the field of computers and computer software, and relates to a storage register technology, in particular to an optimized MRAM system with ECC function and an operation method thereof. Background technique [0002] MRAM is a new memory and storage technology, which has the same fast random read and write characteristics as SRAM / DRAM, and also has the function of Flash memory to permanently retain data after power failure. As we all know, DRAM and Flash are not compatible with standard CMOS semiconductor technology, but MRAM can be integrated into a chip through semiconductor technology and logic circuits. [0003] The principle of MRAM is based on a structure called a magnetic tunnel junction (MTJ), which consists of two layers of ferromagnetic materials sandwiching a very thin layer of non-ferromagnetic insulating material, and the lower layer of ferromagnetic material has a fixed magnetization. The reference layer of the d...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the current problem, the present invention provides a register technology, which mainly solves the technical problem of needing to read and write the entire internal word when the external word length is inconsistent with the internal word length in the case of using ECC. It can match the data of the previous cycle address for read and write operations, avoiding frequent reading of the entire internal word. This application provides an optimized MRAM system with ECC function, which includes registers, error correction circuits and control circuits. The control circuit It includes a read-write operation module, a data write-back MRAM operation module, and an address management module. The address management module stores the address and obtains an external word address, and judges whether the external word address matches the internal word address. The data is written back to the MRAM operation module in the When the external word address does not match the internal word address in the register, the data is written back to the MRAM operation, and the address management module obtains the external word address as a new address after the data is written back to the MRAM operation. Trigger read and write operations on the register when the internal word address matches

Images