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Edge-emitting high-power laser and manufacturing method thereof

A technology of high-power lasers and manufacturing methods, which is applied to lasers, laser components, semiconductor lasers, etc., and can solve problems such as easy burning of laser cavity surfaces

Inactive Publication Date: 2021-01-29
江西铭德半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above situation, it is necessary to provide a side-emitting high-power laser and its manufacturing method to solve the problem that the laser cavity surface of the side-emitting high-power laser is easy to burn

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  • Edge-emitting high-power laser and manufacturing method thereof
  • Edge-emitting high-power laser and manufacturing method thereof
  • Edge-emitting high-power laser and manufacturing method thereof

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Embodiment Construction

[0043] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing the embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0044] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only. ...

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Abstract

The invention relates to an edge-emitting high-power laser and a manufacturing method thereof, the edge-emitting high-power laser comprises an N-type substrate, an N-type buffer layer, an N-type covering layer, a lower waveguide layer, an active layer, an upper waveguide layer, a P-type covering layer and a P-type ohmic contact layer which are sequentially stacked, wherein the lower waveguide layer and the active layer are not doped; the whole active layer presents tensile stress, and the value of the tensile stress is within a threshold range; and the P-type covering layer and the P-type ohmic contact layer form a ridge-shaped ridge waveguide through etching. According to the edge-emitting high-power laser, the active layer with tensile stress is adopted, so that a non-absorption window can be naturally formed on the end face, heating caused by end face absorption can be well reduced, the threshold value of damage to the end face of the laser is increased, and the output power and reliability of the laser are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an edge-emitting high-power laser and a manufacturing method thereof. Background technique [0002] Semiconductor high-power lasers are widely used in industrial manufacturing, lidar, sensing, communication, aerospace and other fields. Due to the advantages of edge-emitting laser cavity length and easy extension, it is more suitable for the manufacture of high-power lasers. At present, semiconductor high-power lasers generally adopt an edge-emitting structure, that is, the light-emitting surface is the end surface of the waveguide, parallel to the direction of the epitaxial layer. [0003] The cavity surface of an edge-emitting laser is generally the cleavage surface of a semiconductor crystal. Since the cleavage surface of the crystal is very flat and smooth, it is a very good reflective surface, so the two parallel cleavage end surfaces of the chip naturally form t...

Claims

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Application Information

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IPC IPC(8): H01S5/343H01S5/34
CPCH01S5/34H01S5/3403H01S5/343
Inventor 柯毛龙李春勇舒凯仇伯仓徐化勇冯欧
Owner 江西铭德半导体科技有限公司
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