Semiconductor element forming sapphire substrate, method of manufacturing semiconductor element forming sapphire substrate, and method of transferring semiconductor element
A technology of sapphire substrate and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, manufacturing tools, etc., which can solve the problems of semiconductor components not necessarily optimized, poor thermal conductivity and electrical conductivity of sapphire, etc., to reduce man-hours and equipment burden, reduce Effects of Man Hours and Equipment Burden
Pending Publication Date: 2021-02-02
V TECH CO LTD
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[0003] On the other hand, since sapphire has poor thermal conductivity and electrical conductivity, it is not necessarily suitable for semiconductor elements after manufacture.
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[0057]First, based onfigure 1 An embodiment in which the semiconductor element of the present invention forms a sapphire substrate will be described.
[0058]Such asfigure 1 As shown, the semiconductor elements form a sapphire substrate 12, and gallium nitride-based semiconductor elements 10 are arranged and formed on the sapphire substrate 11. Regarding the method of forming the gallium nitride-based semiconductor element 10 on the sapphire substrate 11, a generally known method can be used.
[0059]As the semiconductor element, for example, a gallium nitride-based light emitting diode (LED) can be cited. For example, in the case of a semiconductor element 10 made of a gallium nitride-based semiconductor material such as a light emitting diode (LED), it is preferable to use a sapphire substrate 11 having a small lattice mismatch with gallium nitride.
[0060]In addition, the gallium nitride-based semiconductor material is not only pure gallium nitride, but also a semiconductor material cont...
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Abstract
The present invention makes it possible to transfer a semiconductor element to a circuit board with high accuracy and reduce man-hours and facility burden in a step of releasing the semiconductor element from a sapphire substrate. The present invention is a semiconductor element forming sapphire substrate 12 on which gallium nitride-based semiconductor elements are arranged on the sapphire substrate 12, and is characterized in that a gallium nitride re-fusing layer A is provided at an interface between the sapphire substrate 11 and the semiconductor elements 10 and the gallium nitride re-fusing layer has adhesive strength that is smaller than the adhesive strength of an adhesive layer that adheres the semiconductor elements to a circuit board.
Description
Technical field[0001]The present invention relates to a semiconductor element forming sapphire substrate, a method for manufacturing the semiconductor element forming sapphire substrate, and the semiconductor element transfer method.Background technique[0002]Since the lattice mismatch between sapphire and gallium nitride is small, generally, a method of laminating gallium nitride-based semiconductor materials on a sapphire substrate to manufacture semiconductor elements is often used.[0003]On the other hand, since sapphire has poor thermal conductivity and electrical conductivity, it is not necessarily preferable for semiconductor elements after manufacture. Therefore, a process of peeling the semiconductor element from the sapphire substrate and mounting it on a predetermined circuit board is performed.[0004]As a method of peeling the gallium nitride-based semiconductor element from the sapphire substrate, laser lift-off (LLO) has been conventionally known.[0005]The so-called laser...
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IPC IPC(8): H01L21/02H01L21/683H01L33/48
CPCH01L21/7806H01L33/32H01L33/0093H01L33/007H01L21/6835H01L25/0753H01L2221/68354H01L2221/68381H01L2221/68322H01L2224/95H01L2224/81191H01L2224/81001H01L21/52B23K26/57H01L2221/68363H01L21/268H01L24/32H01L24/83H01L2224/32225H01L2224/83005H01L2224/83986H01L2924/1033
Inventor 柳川良胜平野贵文深谷康一郎
Owner V TECH CO LTD