Single crystal growth method and single crystal growth equipment

Abstract

The invention provides a single crystal growth method and single crystal growth equipment. The single crystal growth method comprises the following steps of: providing single crystal growth equipmentwhich comprises a crucible, a crucible lifting device for lifting the crucible, a single crystal lifting device for lifting a single crystal, a guide cylinder and a guide cylinder lifting device for lifting the guide cylinder; setting a theoretical liquid opening distance, determining a theoretical track proportion according to the sizes of the crucible and the single crystal, and then starting single crystal growth; adjusting the positions of one or more of the crucible, the guide cylinder and the single crystal in the growth process of the single crystal, measuring in real time to obtain anactual liquid opening distance, calculating a deviation value between the actual liquid opening distance and a theoretical liquid opening distance, obtaining a crucible track proportion change value according to the deviation value, and adjusting the theoretical crucible track proportion according to the crucible track proportion change value; and adjusting the pulling speed of the single crystalpulling device according to the crucible track proportion change value, so as to keep the pulling speed of the crystal process in the single crystal growth process unchanged, wherein the pulling speedof the crystal process is the lifting speed of the single crystal relative to the liquid level. The method is helpful for improving the growth quality of the single crystal.

Description

technical field [0001] The invention belongs to the field of silicon chip preparation, in particular to a single crystal growth method and single crystal growth equipment. Background technique [0002] The Czochralski method is an existing and commonly used single crystal growth method, also known as the Czochralski method, or CZ method for short. The characteristic of the CZ method is that in a straight furnace body, the polysilicon in a high-purity quartz crucible is melted with graphite resistance heating, and then the seed crystal is inserted into the surface of the melt for welding, while the seed crystal is rotated, and then reversed. In the crucible, the seed crystal is slowly lifted upwards, and after the process of seeding, putting shoulders, turning shoulders, equal-diameter growth, and finishing, it finally grows into a crystal rod of the required diameter and length. [0003] During the growth process of semiconductor silicon single crystal, under constant condi...

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Problems solved by technology

While considering to solve this problem, the inventor also considered that in the prior art, when the position of the crucible is adjusted to change the distance between the liquid openings, the difference between the set crystal lifting speed and the lifting speed of the crystal relative to the liquid level will also occur, which will affect the single crystal. growth quality, so the inventors came up with a new solution

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