Preparation method of high-electron-mobility transistor

Abstract

The invention provides a preparation method of a high-electron-mobility transistor, which belongs to the technical field of semiconductors. The preparation method comprises the steps that an electricleakage shielding layer grows on a Si substrate, the electric leakage shielding layer comprises at least one periodic structure, and each periodic structure is formed through the following three stepsoft firstly, transversely growing AlGaN to form a two-dimensional structure layer, secondly, conducting annealing treatment under the pressure of 300 torr to 500 torr, and thirdly, longitudinally growing GaN to form a three-dimensional structure layer. Sequentially, a GaN channel layer and an AlGaN barrier layer grow on the electric leakage shielding layer. The electric leakage shielding layer comprising at least one periodic structure grows on the Si substrate, the epitaxial defect density can be reduced to 106 / cm<2> or below, formation of an electric leakage channel is effectively inhibited, the probability of tunnel breakdown of the HEMT is reduced, the antistatic capacity of the HEMT is improved, and the reliability of the HEMT is ensured to meet the requirement.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a preparation method of a high electron mobility transistor. Background technique [0002] HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) is a type of FET (Field Effect Transistor, Field Effect Transistor), which uses two materials with different energy gaps to form a heterojunction to provide a channel for carriers. [0003] In the related art, the HEMT includes an epitaxial structure and a source, a drain, and a gate respectively arranged on the epitaxial structure. The source and the drain form an ohmic contact with the epitaxial structure, and a Schottky contact is formed between the gate and the epitaxial structure. touch. The epitaxial structure includes a Si substrate and a GaN channel layer and an AlGaN barrier layer stacked on the Si substrate in sequence. The Si substrate plays a supporting role and provides a surface for ep...

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Problems solved by technology

[0004] There are a lot of dislocations and defects in the GaN channel layer grown on the Si substrate, which is easy to form leakage channels, resulting in poor antistatic ability of HEMT

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