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Synaptic thin film transistor based on lithium-doped transparent oxide and preparation method thereof

A technology of transparent oxide and thin film transistor, applied in the field of microelectronics, can solve the problems of unfavorable flexible electronic devices, long preparation time and high production cost, and achieve the effects of simple and efficient production process, low production cost, and good characteristics of synaptic devices

Pending Publication Date: 2021-02-19
XIAN JIAOTONG LIVERPOOL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing methods of preparing synaptic thin film transistors are generally prepared by photolithography and vacuum coating, which require the use of expensive large-scale equipment, long preparation time and high production costs
And the current synaptic thin film transistor is not conducive to the application of flexible electronic devices and other applications

Method used

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  • Synaptic thin film transistor based on lithium-doped transparent oxide and preparation method thereof
  • Synaptic thin film transistor based on lithium-doped transparent oxide and preparation method thereof

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preparation example Construction

[0031] The present invention provides a method for preparing a lithium-doped transparent oxide-based synaptic thin film transistor, which is used to prepare the above-mentioned lithium-doped transparent oxide-based synaptic thin film transistor. The preparation method includes:

[0032] S1. Provide a substrate, and perform cleaning and hydrophilic treatment on the substrate;

[0033] S2. Prepare a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method;

[0034] S3. Hydrophilic treatment of the lithium-doped transparent oxide insulating layer;

[0035] S4, using an aqueous solution method to prepare an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer;

[0036] S5, using a thermal evaporation process to prepare a source electrode and a drain electrode on the oxide semiconductor layer;

[0037] S6. Using a thermal evaporation process, prepare a gate electrode on the side of the substr...

Embodiment 1

[0047] Step 1. Provide n-type heavily doped silicon wafer and clean it

[0048] Put the n-type heavily doped silicon chip in a flower basket made of polyethylene material first, put the flower basket containing the n-type heavily doped silicon chip into deionized water for the first cleaning; then put the n-type heavily doped silicon chip into the flower basket The basket of miscellaneous silicon wafers was completely immersed in 4% hydrofluoric acid solution for 30s; then the flower basket containing n-type heavily doped silicon wafers was placed in deionized water for a second cleaning; finally, the n-type heavily doped silicon wafers were cleaned with nitrogen gas. Doped silicon wafers were blown dry.

[0049] Step 2. Hydrophilic treatment of n-type heavily doped silicon wafers

[0050] Put the cleaned n-type heavily doped silicon wafer into the plasma surface treatment instrument, first vacuum the plasma surface treatment instrument with an air pump for 5 minutes, and the...

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Abstract

The invention relates to a preparation method of a synaptic thin film transistor based on lithium-doped transparent oxide, which comprises the following steps: S1, providing a substrate, and carryingout cleaning and hydrophilic treatment on the substrate; S2, preparing a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method; S3, performing hydrophilic treatment on the lithium-doped transparent oxide insulating layer; S4, preparing an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer by using an aqueous solution method; S5, preparing a source electrode and a drain electrode on the oxide semiconductor layer by using a thermal evaporation process; and S6, preparing a gate electrode on one side, faraway from the lithium-doped transparent oxide insulating layer, of the substrate by utilizing a thermal evaporation process. The preparation method is environment-friendly and low-temperature, large-area preparation can be realized, the preparation process is simple and efficient due to relatively low temperature in preparation, the preparation time can be greatly shortened, the preparation costis relatively low, and the insulating layer has vacancy defects; and lithium ions are doped in the insulating layer, so that the device has good synaptic device characteristics.

Description

technical field [0001] The invention relates to a lithium-doped transparent oxide-based synaptic thin film transistor and a preparation method thereof, belonging to the technical field of microelectronics. Background technique [0002] With the rise of the Internet of Things, big data, and artificial intelligence, people's demand for low-energy, high-adaptability computing is increasing, and traditional von Neumann computing has been difficult to meet the needs of human society. Neuromorphic computing has a completely different information processing method from traditional von Neumann computing, and greatly improves the thinking ability and response ability of computers by imitating the structure of the human brain. In the brain, neurons realize functions such as learning and memory by modifying the synaptic weights between biological synapses, which indicates that for the realization of neuromorphic computing, the development of artificial synapses (ie, synaptic thin film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/445H01L21/34H01L29/51H01L29/786
CPCH01L29/66969H01L29/7869H01L29/517H01L21/445
Inventor 王琦男赵春赵策洲刘伊娜杨莉
Owner XIAN JIAOTONG LIVERPOOL UNIV
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