Synaptic thin film transistor based on lithium-doped transparent oxide and preparation method thereof
A technology of transparent oxide and thin film transistor, applied in the field of microelectronics, can solve the problems of unfavorable flexible electronic devices, long preparation time and high production cost, and achieve the effects of simple and efficient production process, low production cost, and good characteristics of synaptic devices
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[0031] The present invention provides a method for preparing a lithium-doped transparent oxide-based synaptic thin film transistor, which is used to prepare the above-mentioned lithium-doped transparent oxide-based synaptic thin film transistor. The preparation method includes:
[0032] S1. Provide a substrate, and perform cleaning and hydrophilic treatment on the substrate;
[0033] S2. Prepare a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method;
[0034] S3. Hydrophilic treatment of the lithium-doped transparent oxide insulating layer;
[0035] S4, using an aqueous solution method to prepare an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer;
[0036] S5, using a thermal evaporation process to prepare a source electrode and a drain electrode on the oxide semiconductor layer;
[0037] S6. Using a thermal evaporation process, prepare a gate electrode on the side of the substr...
Embodiment 1
[0047] Step 1. Provide n-type heavily doped silicon wafer and clean it
[0048] Put the n-type heavily doped silicon chip in a flower basket made of polyethylene material first, put the flower basket containing the n-type heavily doped silicon chip into deionized water for the first cleaning; then put the n-type heavily doped silicon chip into the flower basket The basket of miscellaneous silicon wafers was completely immersed in 4% hydrofluoric acid solution for 30s; then the flower basket containing n-type heavily doped silicon wafers was placed in deionized water for a second cleaning; finally, the n-type heavily doped silicon wafers were cleaned with nitrogen gas. Doped silicon wafers were blown dry.
[0049] Step 2. Hydrophilic treatment of n-type heavily doped silicon wafers
[0050] Put the cleaned n-type heavily doped silicon wafer into the plasma surface treatment instrument, first vacuum the plasma surface treatment instrument with an air pump for 5 minutes, and the...
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