This invention relates to a high-performance
lithium-doped
nickel oxide /
zinc oxide /
silicon heterojunction ultraviolet detector, its fabrication method, and its applications. From bottom to top, an n-type Si
wafer, an n-type ZnO interlayer, and a
lithium-doped p-type NiO thin film are stacked sequentially. A top
electrode layer is disposed on the upper surface of the
lithium-doped p-type NiO thin film layer, and a bottom
electrode layer is disposed on the area of the n-type Si
wafer not covered by the n-type ZnO interlayer and the lithium-doped p-type NiO thin film layer. This invention uses magnetron
sputtering to sequentially fabricate the n-type ZnO interlayer and the lithium-doped p-type NiO thin film layer on the n-type Si
wafer, and uses
electron beam
evaporation to fabricate the top and bottom
electrode layers. Compared with existing technologies, the
heterojunction ultraviolet detector fabricated by this invention exhibits both low
dark current and low visible
light response, and the process is simpler, lower in cost, and can be fabricated on a large area with high feasibility for
mass production.